Invention Grant
- Patent Title: Spin valve magnetoresistance element with improved response to magnetic fields
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Application No.: US15165322Application Date: 2016-05-26
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Publication No.: US09812637B2Publication Date: 2017-11-07
- Inventor: Claude Fermon , Paolo Campiglio , Bryan Cadugan
- Applicant: Allegro Microsystems, LLC
- Applicant Address: US MA Worcester FR Paris
- Assignee: Allegro MicroSystems, LLC,Commissariat A L'Energie Atomique Et Aux Energies Alternatives
- Current Assignee: Allegro MicroSystems, LLC,Commissariat A L'Energie Atomique Et Aux Energies Alternatives
- Current Assignee Address: US MA Worcester FR Paris
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G01R33/09 ; H01F10/32 ; H01L43/08 ; H01L43/12 ; G11C11/00 ; G01R33/00 ; H01L43/02 ; H01L43/10 ; B82Y10/00
Abstract:
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
Public/Granted literature
- US20160359103A1 SPIN VALVE MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS Public/Granted day:2016-12-08
Information query
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