公开(公告)号：US08638601B1

公开(公告)日：2014-01-28

申请号：US13543061

申请日：2012-07-06

Applicant: Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

Inventor： Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

IPC: G11C11/14

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675

Abstract: Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged.

Abstract translation: 当畴壁由电流脉冲驱动时，包括钴，镍和铂层的磁线显示改善的畴壁运动特性。 这些线表现出垂直的磁各向异性，从而支持窄畴壁的传播。 畴壁的运动方向可能受到排列铂和钴层的顺序的影响。

公开(公告)号：US08687415B2

公开(公告)日：2014-04-01

申请号：US13543090

申请日：2012-07-06

Applicant: Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

Inventor： Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

IPC: G11C11/14

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F1/0072 ,  H01F10/3218 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.

Abstract translation: 当畴壁由电流脉冲驱动时，包括两个反铁磁耦​​合磁区的磁线显示改善的畴壁运动特性。 磁性区域优选包括Co，Ni和Pt并表现出垂直的磁各向异性，从而支持窄畴壁的传播。 畴壁的运动方向可能受布线布线顺序的影响。

公开(公告)号：US6166948A

公开(公告)日：2000-12-26

申请号：US390596

申请日：1999-09-03

Applicant: Stuart Stephen Papworth Parkin ,  Luc Thomas

Inventor： Stuart Stephen Papworth Parkin ,  Luc Thomas

IPC: G11C11/16 ,  H01F10/32 ,  G11C11/14

CPC classification number: B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272

Abstract: An improved magnetic tunnel junction (MTJ) memory cell for use in a nonvolatile magnetic random access memory (MRAM) array has a free layer formed as two ferromagnetic films that are magnetostatically coupled antiparallel to one another by their respective dipole fields. The magnetostatic or dipolar coupling of the two ferromagnetic films occurs across a nonferromagnetic spacer layer that is selected to prevent exchange coupling between the two ferromagnetic films. The magnetic moments of the two ferromagnetic films are antiparallel to another so that the multilayer free layer structure has a reduced net magnetic moment. In the presence of an applied magnetic field, such as during writing to the cell, the moments of the two ferromagnetic films switch directions substantially simultaneously, so that the net magnetic moment of the multilayer free layer structure can have two possible orientations relative to the orientation of the fixed or pinned layer of the MTJ cell, thus resulting in the two stable magnetic states of the MTJ cell. The reduced net magnetic moment of the multilayer free layer structure reduces the magnetostatic coupling between the multilayer free layer and the pinned ferromagnetic layer in the MTJ cell, as well as the magnetostatic coupling between adjacent MTJ cells in the array. As a result, the cells, and thus the MRAM array, can be made smaller.

Abstract translation: 用于非易失性磁随机存取存储器（MRAM）阵列的改进的磁隧道结（MTJ）存储单元具有形成为两个铁磁膜的自由层，它们通过它们各自的偶极场彼此反平行地静磁耦合。 两个铁磁膜的静磁或偶极耦合发生在非铁磁间隔层上，该非铁磁间隔层被选择以防止两个铁磁膜之间的交换耦合。 两个铁磁膜的磁矩反向平行于另一个，使得多层自由层结构具有减小的净磁矩。 在存在施加的磁场的情况下，例如在写入电池期间，两个铁磁膜的力矩基本上同时切换方向，使得多层自由层结构的净磁矩可以相对于取向具有两个可能的取向 的MTJ电池的固定或固定层，从而导致MTJ电池的两个稳定的磁状态。 多层自由层结构的减小的净磁矩降低了MTJ单元中多层自由层和钉扎铁磁层之间的静磁耦合，以及阵列中相邻MTJ单元之间的静磁耦合。 结果，可以使电池，从而使MRAM阵列更小。

公开(公告)号：US20100046268A1

公开(公告)日：2010-02-25

申请号：US12552667

申请日：2009-09-02

Applicant: Rai Moriya ,  Stuart Parkin ,  Luc Thomas

Inventor： Rai Moriya ,  Stuart Parkin ,  Luc Thomas

IPC: G11C19/00 ,  G11C11/00 ,  G11C11/14

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10S977/933

Abstract: A method for use with a magnetic racetrack device includes placing domain walls having a first structure and domain walls having a second, different structure along the racetrack at stable positions corresponding to different regions within the device. The domain walls having the first structure and the domain walls having the second structure occupy alternating positions along the racetrack. A current pulse is applied to the racetrack, so that each of the domain walls moves to an adjacent region. This results in a transformation of the domain walls having the first structure into domain walls having the second structure, and vice versa. The first structure may be a vortex structure and the second structure may be a transverse structure.

Abstract translation: 一种与磁性跑道装置一起使用的方法包括将具有第一结构的畴壁和具有第二不同结构的畴壁沿着跑道安置在对应于装置内不同区域的稳定位置处。 具有第一结构的畴壁和具有第二结构的畴壁占据沿着跑道的交替位置。 电流脉冲施加到赛道，使得每个畴壁移动到相邻区域。 这导致具有第一结构的畴壁的转变为具有第二结构的畴壁，反之亦然。 第一结构可以是涡流结构，第二结构可以是横向结构。

公开(公告)号：US20080253161A1

公开(公告)日：2008-10-16

申请号：US11622644

申请日：2007-01-12

Applicant: Stuart Parkin ,  Luc Thomas

Inventor： Stuart Parkin ,  Luc Thomas

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  Y10S977/933

Abstract: A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.

Abstract translation: 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度，并且电流脉冲被充分接近进动周期的脉冲间隔分开，使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度，如果直流电被施加到畴壁而不是至少一个电流脉冲，则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25％至75％的范围内。

公开(公告)号：US07492622B2

公开(公告)日：2009-02-17

申请号：US11622644

申请日：2007-01-12

Applicant: Stuart Parkin ,  Luc Thomas

Inventor： Stuart Parkin ,  Luc Thomas

IPC: G11C7/00 ,  G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  Y10S977/933

Abstract: A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.

Abstract translation: 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度，并且电流脉冲被充分接近进动周期的脉冲间隔分开，使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度，如果直流电被施加到畴壁而不是至少一个电流脉冲，则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25％至75％的范围内。

公开(公告)号：US4285044A

公开(公告)日：1981-08-18

申请号：US56668

申请日：1979-07-11

Applicant: Luc Thomas ,  Claude Cardot

Inventor： Luc Thomas ,  Claude Cardot

IPC: G06F1/02

CPC classification number: G06F1/022 ,  G06F2101/04

Abstract: A digital sinewave generator can be used in digital equipment, e.g. instead of a local oscillator for modulation/demodulation of signals. If there is no simple relationship between sampling rate and the frequency of the sinewave, successive sample values must be calculated since storage of these values would be prohibitive. For a sinewave Re.sup.jk.phi. sampled at successive instants k=0, 1, 2, . . . etc. separated by a phase angle .phi., quadrature components A.sub.k +jB.sub.k =Re.sup.jk.phi. can be calculated using the algorithm:A.sub.k+1 =cos.phi.A.sub.k -sin.phi.B.sub.kB.sub.k+1 =sin.phi.A.sub.k +cos.phi.B.sub.k.Unfortunately it is impossible for cos.sup.2 .phi.+sin.sup.2 .phi. to be exactly equal to unity if calculations are performed with finite precision using an even number base, which as the effect of causing the modulus of a sinewave generated by this algorithm to tend exponentially to 0 to .infin.. The present invention overcomes this by using the above algorithm to obtain approximations A.sub.k+1 ' and B.sub.k+1 ' to the desired result at terminals (9 and 10) and then multiplying (22,23) the approximations A.sub.k+1 ' and B.sub.k+1 ' by a correction factor ( 1-1/2.epsilon.) to obtain better approximations A.sub.k+1 and B.sub.k+1 which are stable about the desired amplitude R. ##EQU1## Such a generator can be used as a local oscillator in a modem for example.

Abstract translation: 数字正弦波发生器可用于数字设备，例如 而不是用于调制/解调信号的本地振荡器。 如果采样率和正弦波的频率之间没有简单的关系，则必须计算连续的采样值，因为这些值的存储将被禁止。 对于在连续时刻k = 0,1,2，采样的正弦波Rejk phi。 。 。 通过相位角phi分离，可以使用以下算法计算正交分量Ak + jBk = Rejk phi：Ak + 1 = cos phi Ak-sin phi Bk Bk + 1 = sin phi Ak + cos phi Bk。 不幸的是，如果使用偶数基数以有限的精度执行计算，则cos2 phi + sin2 phi不可能完全等于1，这是因为使由该算法产生的正弦波的模数指数地趋于0到 无穷 。 本发明通过使用上述算法来克服这一点，以在端子（9和10）处获得对于期望结果的近似值Ak ​​+ 1'和Bk + 1'，然后乘以（22,23）近似值Ak ​​+ 1'和Bk + 1“通过校正因子（1-1 /2ε）获得更好的近似值Ak ​​+ 1和Bk + 1，其对于期望的幅度R是稳定的。这种发生器可以用作调制解调器中的本地振荡器 例如。

公开(公告)号：US07667994B1

公开(公告)日：2010-02-23

申请号：US12552667

申请日：2009-09-02

Applicant: Rai Moriya ,  Stuart Parkin ,  Luc Thomas

Inventor： Rai Moriya ,  Stuart Parkin ,  Luc Thomas

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10S977/933

Abstract: A method for use with a magnetic racetrack device includes placing domain walls having a first structure and domain walls having a second, different structure along the racetrack at stable positions corresponding to different regions within the device. The domain walls having the first structure and the domain walls having the second structure occupy alternating positions along the racetrack. A current pulse is applied to the racetrack, so that each of the domain walls moves to an adjacent region. This results in a transformation of the domain walls having the first structure into domain walls having the second structure, and vice versa. The first structure may be a vortex structure and the second structure may be a transverse structure.

Abstract translation: 一种与磁性跑道装置一起使用的方法包括将具有第一结构的畴壁和具有第二不同结构的畴壁沿着跑道安置在对应于装置内不同区域的稳定位置处。 具有第一结构的畴壁和具有第二结构的畴壁占据沿着跑道的交替位置。 电流脉冲施加到赛道，使得每个畴壁移动到相邻区域。 这导致具有第一结构的畴壁的转变为具有第二结构的畴壁，反之亦然。 第一结构可以是涡流结构，第二结构可以是横向结构。

公开(公告)号：US20090103347A1

公开(公告)日：2009-04-23

申请号：US12124306

申请日：2008-05-21

Applicant: Stuart Parkin ,  Luc Thomas

Inventor： Stuart Parkin ,  Luc Thomas

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  Y10S977/933

Abstract: A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.

Abstract translation: 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度，并且电流脉冲被充分接近进动周期的脉冲间隔分开，使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度，如果直流电被施加到畴壁而不是至少一个电流脉冲，则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25％至75％的范围内。

公开(公告)号：US07760535B2

公开(公告)日：2010-07-20

申请号：US12124306

申请日：2008-05-21

Applicant: Stuart Parkin ,  Luc Thomas

Inventor： Stuart Parkin ,  Luc Thomas

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  Y10S977/933

Abstract: A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.

Abstract translation: 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度，并且电流脉冲被充分接近进动周期的脉冲间隔分开，使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度，如果直流电被施加到畴壁而不是至少一个电流脉冲，则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25％至75％的范围内。