Invention Application
- Patent Title: SPIN VALVE MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS
- Patent Title (中): 旋转磁体磁阻元件对磁场有改进的响应
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Application No.: US15165322Application Date: 2016-05-26
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Publication No.: US20160359103A1Publication Date: 2016-12-08
- Inventor: Claude Fermon , Paolo Campiglio , Bryan Cadugan
- Applicant: Allegro Microsystems, LLC
- Applicant Address: US MA Worcester FR Paris
- Assignee: Allegro Microsystems, LLC,COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
- Current Assignee: Allegro Microsystems, LLC,COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
- Current Assignee Address: US MA Worcester FR Paris
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G01R33/09 ; H01L43/12 ; H01L43/02 ; H01L43/10
Abstract:
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
Public/Granted literature
- US09812637B2 Spin valve magnetoresistance element with improved response to magnetic fields Public/Granted day:2017-11-07
Information query
IPC分类:
