公开(公告)号：US08289756B2

公开(公告)日：2012-10-16

申请号：US12502213

申请日：2009-07-13

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US08289751B2

公开(公告)日：2012-10-16

申请号：US13117849

申请日：2011-05-27

申请人： Wei Tian ,  Nurul Amin ,  Insik Jin ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

发明人： Wei Tian ,  Nurul Amin ,  Insik Jin ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/76

摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

摘要翻译： 公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。 在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。 通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程 通过在相反的第二方向上的写入电流。 开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

公开(公告)号：US08288254B2

公开(公告)日：2012-10-16

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US08213222B2

公开(公告)日：2012-07-03

申请号：US13210436

申请日：2011-08-16

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08203875B2

公开(公告)日：2012-06-19

申请号：US13014917

申请日：2011-01-27

申请人： Nurul Amin ,  Insik Jim ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

发明人： Nurul Amin ,  Insik Jim ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

IPC分类号： G11C11/36

CPC分类号： H01L27/224 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/1021

摘要： An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

摘要翻译： 目前公开了一种反并联二极管结构和制造方法。 在一些实施例中，反并联二极管结构具有包括设置在第一半导体层和第二半导体层之间的第一绝缘体层的半导体区域。 半导体区域可以通过第一金属材料在第一侧上结合并且通过第二金属材料在第二侧上结合，使得防止低于预定值的电流通过半导体区域，并且超过预定值的电流通过 半导体区域。

公开(公告)号：US20120149373A1

公开(公告)日：2012-06-14

申请号：US13201220

申请日：2010-02-11

申请人： Wei Tian ,  Dazhong Liu ,  Zhihui Zhang ,  YuanFang Yu ,  Ting Lu ,  Xiaowu Zhao ,  Yonggang Fang

发明人： Wei Tian ,  Dazhong Liu ,  Zhihui Zhang ,  YuanFang Yu ,  Ting Lu ,  Xiaowu Zhao ,  Yonggang Fang

IPC分类号： H04W36/00

CPC分类号： H04W36/385

摘要： Techniques, apparatuses, and systems for redirecting mobile services include generating a message with a redirection indication and transmitting the message to one or more mobile stations. A redirection indication can include an identifier for a wireless network operator and access information for a network associated with the wireless network operator.

摘要翻译： 用于重定向移动服务的技术，设备和系统包括：生成具有重定向指示的消息并将消息发送到一个或多个移动站。 重定向指示可以包括无线网络运营商的标识符和与无线网络运营商相关联的网络的接入信息。

公开(公告)号：US20120142169A1

公开(公告)日：2012-06-07

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US20120134057A1

公开(公告)日：2012-05-31

申请号：US12956752

申请日：2010-11-30

申请人： Dion Song ,  Mark William Covington ,  Qing He ,  Dimitar Velikov Dimitrov ,  Wei Tian ,  Wonjoon Jung ,  Sunita Bhardwaj Gangopadhyay

发明人： Dion Song ,  Mark William Covington ,  Qing He ,  Dimitar Velikov Dimitrov ,  Wei Tian ,  Wonjoon Jung ,  Sunita Bhardwaj Gangopadhyay

IPC分类号： G11B5/33 ,  H01L29/82 ,  G11B5/11

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.

摘要翻译： 能够检测磁状态变化的磁性元件，例如用作数据转换头中的读取传感器或作为固态非易失性存储元件。 根据各种实施例，磁性元件包括具有第一面积范围的磁响应叠层或叠层。 堆叠包括位于第一和第二铁磁自由层之间的间隔层。 至少一个反铁磁（AFM）接头连接到与隔离层相对的表面上的第一自由层，AFM接头具有小于第一面积范围的第二面积范围。

公开(公告)号：US08158964B2

公开(公告)日：2012-04-17

申请号：US12502221

申请日：2009-07-13

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/02 ,  H01L29/47

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US08035177B2

公开(公告)日：2011-10-11

申请号：US12425466

申请日：2009-04-17

申请人： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

发明人： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC分类号： H01L29/82 ,  G11C11/02

摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.