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公开(公告)号：US10283375B2
公开(公告)日：2019-05-07
申请号：US15805683
申请日：2017-11-07
发明人： Hsien-Wei Chen , Chen-Hua Yu , Chi-Hsi Wu , Der-Chyang Yeh , An-Jhih Su , Wei-Yu Chen
IPC分类号： H01L21/48 , H01L21/56 , H01L23/31 , H01L23/498 , H01L25/00 , H01L23/00 , H01L25/10 , H01L25/065 , H01L23/538
摘要： A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.
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公开(公告)号：US20190131280A1
公开(公告)日：2019-05-02
申请号：US16230965
申请日：2018-12-21
发明人： Chen-Hua Yu , Shin-Puu Jeng , Der-Chyang Yeh , Hsien-Wei Chen , Cheng-Chieh Hsieh , Ming-Yen Chiu
IPC分类号： H01L25/065 , H01L25/10 , H01L23/367 , H01L23/498 , H01L21/48 , H01L21/56 , H01L23/31
CPC分类号： H01L25/0657 , H01L21/4853 , H01L21/568 , H01L23/3128 , H01L23/3675 , H01L23/3677 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/80 , H01L25/105 , H01L25/16 , H01L2224/0345 , H01L2224/0361 , H01L2224/05624 , H01L2224/05647 , H01L2224/08225 , H01L2224/80006 , H01L2224/80904 , H01L2224/9202 , H01L2225/06517 , H01L2225/0652 , H01L2225/06548 , H01L2225/06555 , H01L2225/06572 , H01L2225/06589 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/00012 , H01L2924/00014
摘要： A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.
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公开(公告)号：US10269619B2
公开(公告)日：2019-04-23
申请号：US14037185
申请日：2013-09-25
发明人： Chen-Hua Yu , Der-Chyang Yeh
IPC分类号： H05K3/42 , H05K3/46 , H01L21/56 , H01L23/00 , H01L23/31 , H01L25/10 , H01L21/768 , H01L23/498 , H01L23/538
摘要： Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.
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公开(公告)号：US20190115300A1
公开(公告)日：2019-04-18
申请号：US16222219
申请日：2018-12-17
发明人： Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Der-Chyang Yeh , Ming Shih Yeh , Wei-Cheng Wu
IPC分类号： H01L23/538 , H01L21/56 , H01L25/16 , H01L21/768 , H01L21/3105 , H01L23/00 , H01L21/683 , H01L25/065 , H01L25/00
摘要： A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.
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公开(公告)号：US20190098756A1
公开(公告)日：2019-03-28
申请号：US16203919
申请日：2018-11-29
发明人： Cheng-Hsien Hsieh , Chi-Hsi Wu , Chen-Hua Yu , Der-Chyang Yeh , Hsien-Wei Chen , Li-Han Hsu , Wei-Cheng Wu
摘要： A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
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公开(公告)号：US10165682B2
公开(公告)日：2018-12-25
申请号：US14979954
申请日：2015-12-28
发明人： Cheng-Hsien Hsieh , Chi-Hsi Wu , Chen-Hua Yu , Der-Chyang Yeh , Hsien-Wei Chen , Li-Han Hsu , Wei-Cheng Wu
摘要： A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
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公开(公告)号：US10163807B2
公开(公告)日：2018-12-25
申请号：US15640975
申请日：2017-07-03
发明人： Ying-Ju Chen , Der-Chyang Yeh , Hsien-Wei Chen , Shih-Peng Tai
IPC分类号： H01L23/544 , B81C99/00 , H01L21/56 , H01L21/68 , H01L21/683 , H01L21/78 , H01L23/31 , H01L23/538 , H01L23/58 , H01L23/00 , H01L25/065
摘要： A method includes forming an alignment pattern over an insulating layer formed over a carrier. A die is mounted over the carrier and encapsulated. Connectors are formed and the structure is attached to a debond tape. The carrier is removed. A cutting device is aligned to a backside of the insulating layer using the alignment pattern. The first insulating layer and encapsulant are cut from the backside of the insulating layer. Another method includes scanning a backside of a packages structure for an alignment pattern in a first package area of the packages structure. A cutting device is aligned to a cut-line in a non-package area of the packages structure based on the alignment pattern and packages are singulated. An InFO package includes an insulating layer on the backside, the insulating layer having a laser marking thereon. The InFO package also includes an alignment pattern proximate to the insulating layer.
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公开(公告)号：US20180323150A1
公开(公告)日：2018-11-08
申请号：US16023705
申请日：2018-06-29
发明人： Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Der-Chyang Yeh , Ming Shih Yeh , Wei-Cheng Wu
IPC分类号： H01L23/538 , H01L21/56 , H01L25/065 , H01L23/00 , H01L25/00 , H01L21/3105 , H01L21/768 , H01L25/16 , H01L21/683
CPC分类号： H01L23/5389 , H01L21/31053 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/76802 , H01L24/19 , H01L24/24 , H01L25/0655 , H01L25/16 , H01L25/50 , H01L2221/68359 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16145 , H01L2224/16227 , H01L2224/24137 , H01L2224/24195 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73259 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2224/92224 , H01L2924/15311 , H01L2924/18161 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19102 , H01L2924/19104 , H01L2924/00
摘要： A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.
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公开(公告)号：US20180277520A1
公开(公告)日：2018-09-27
申请号：US15990055
申请日：2018-05-25
发明人： Chen-Hua Yu , An-Jhih Su , Wei-Yu Chen , Ying-Ju Chen , Tsung-Shu Lin , Chin-Chuan Chang , Hsien-Wei Chen , Wei-Cheng Wu , Li-Hsien Huang , Chi-Hsi Wu , Der-Chyang Yeh
IPC分类号： H01L25/065 , H01L25/00 , H01L21/48 , H01L21/56 , H01L21/78 , H01L23/31 , H01L23/498
CPC分类号： H01L25/0657 , H01L21/4853 , H01L21/486 , H01L21/56 , H01L21/78 , H01L23/3114 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L25/0652 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/97 , H01L2225/06527 , H01L2225/06548 , H01L2225/06555 , H01L2924/3511 , H01L2224/83
摘要： A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.
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公开(公告)号：US20180151507A1
公开(公告)日：2018-05-31
申请号：US15640975
申请日：2017-07-03
发明人： Ying-Ju Chen , Der-Chyang Yeh , Hsien-Wei Chen , Shih-Peng Tai
IPC分类号： H01L23/544 , H01L21/56 , H01L23/00 , H01L21/683 , H01L21/78 , H01L21/68 , H01L23/538 , H01L23/31 , H01L23/58 , H01L25/065
CPC分类号： H01L23/544 , B81C99/007 , H01L21/56 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/681 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3107 , H01L23/3128 , H01L23/5386 , H01L23/5389 , H01L23/585 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/96 , H01L25/0655 , H01L2221/68327 , H01L2221/68331 , H01L2221/68359 , H01L2221/68372 , H01L2221/68381 , H01L2223/54406 , H01L2223/5442 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/0231 , H01L2224/02379 , H01L2224/0239 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/03614 , H01L2224/0362 , H01L2224/0401 , H01L2224/05147 , H01L2224/05166 , H01L2224/11002 , H01L2224/1146 , H01L2224/11849 , H01L2224/12105 , H01L2224/13024 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/215 , H01L2224/32225 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074
摘要： A method includes forming an alignment pattern over an insulating layer formed over a carrier. A die is mounted over the carrier and encapsulated. Connectors are formed and the structure is attached to a debond tape. The carrier is removed. A cutting device is aligned to a backside of the insulating layer using the alignment pattern. The first insulating layer and encapsulant are cut from the backside of the insulating layer. Another method includes scanning a backside of a packages structure for an alignment pattern in a first package area of the packages structure. A cutting device is aligned to a cut-line in a non-package area of the packages structure based on the alignment pattern and packages are singulated. An InFO package includes an insulating layer on the backside, the insulating layer having a laser marking thereon. The InFO package also includes an alignment pattern proximate to the insulating layer.
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