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    Semiconductor devices
    35.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10749030B2

    公开(公告)日：2020-08-18

    申请号：US16018121

    申请日：2018-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Soojin Jeong ,  Dong Il Bae ,  Geumjong Bae ,  Seungmin Song ,  Junggil Yang

    IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/092 ,  H01L29/08 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/06

    Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

    SEMICONDUCTOR DEVICES
    36.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200091152A1

    公开(公告)日：2020-03-19

    申请号：US16405174

    申请日：2019-05-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang Woo Noh ,  Myung Gil Kang ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang ,  Sang Hoon Lee

    IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/033 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/08

    Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

    SEMICONDUCTOR DEVICE INCLUDING FIN-FET
    37.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING FIN-FET 审中-公开

    公开(公告)号：US20190393315A1

    公开(公告)日：2019-12-26

    申请号：US16205851

    申请日：2018-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang Woo NOH ,  Seung Min Song ,  Geum Jong Bae ,  Dong Il Bae

    IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L29/06

    Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

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