公开(公告)号：US20050171097A1

公开(公告)日：2005-08-04

申请号：US11098440

申请日：2005-04-05

申请人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

发明人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

IPC分类号： A01N41/10 ,  A01N43/08 ,  A01N43/10 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N43/58 ,  A01N43/60 ,  A01N43/76 ,  A01N43/78 ,  A61K31/4164 ,  A61K31/4196 ,  A61K31/445 ,  A61K31/495 ,  A61K31/498 ,  A61K31/50 ,  A61K31/513 ,  A61K31/53 ,  C07C309/00 ,  C07C317/14 ,  C07C317/22 ,  C07C317/32 ,  C07C323/09 ,  C07C323/18 ,  C07C323/31 ,  C07D211/54 ,  C07D213/52 ,  C07D213/57 ,  C07D213/64 ,  C07D231/12 ,  C07D249/08 ,  C07D253/00 ,  C07D263/32 ,  C07D277/26 ,  C07D307/56 ,  C07D333/24 ,  C07D333/28

CPC分类号： C07D213/12 ,  A01N31/08 ,  A01N31/14 ,  A01N33/10 ,  A01N37/08 ,  A01N37/34 ,  A01N41/10 ,  A01N43/08 ,  A01N43/10 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N43/653 ,  A01N43/76 ,  A01N43/78 ,  A01N47/18 ,  C07C317/32 ,  C07C317/48 ,  C07C323/18 ,  C07C323/20 ,  C07C323/36 ,  C07C323/63 ,  C07D213/32 ,  C07D213/48 ,  C07D213/57 ,  C07D213/64 ,  C07D239/36 ,  C07D239/38 ,  C07D239/40 ,  C07D249/08 ,  C07D333/24

摘要： 3-Arylphenyl sulfide derivatives represented by general formula (I): (wherein R is a C2-C6 alkyl group, a C2-C6 alkenyl group, a C2-C6 alkynyl group or the like, B0 to B2 and B3 are hydrogen atoms, halogen atoms, cyano groups, C1-C4 haloalkyl groups or the like, n is 0, 1 or 2, and Ar is a phenyl ring, a pyridine ring, a thiophene ring, a pyrazole ring or the like), and insecticides and miticides containing the 3-arylphenyl sulfide derivatives as an active ingredient.

摘要翻译： 由通式（I）表示的3-芳基苯基硫醚衍生物：其中R是C 2 -C 6烷基，C 2 - -C 6亚烷基，C 2 -C 6亚炔基等，B 0〜B 2个和3个3个是氢原子，卤素原子，氰基，C 1 -C 4卤代烷基或 n为0,1或2，Ar为苯环，吡啶环，噻吩环，吡唑环等），含有3-芳基苯基硫醚衍生物的杀虫剂和杀螨剂为活性成分。

公开(公告)号：US06924227B2

公开(公告)日：2005-08-02

申请号：US09932943

申请日：2001-08-21

申请人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Nobuo Kawahashi ,  Masayuki Hattori ,  Kazuo Nishimoto

发明人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Nobuo Kawahashi ,  Masayuki Hattori ,  Kazuo Nishimoto

IPC分类号： H01L21/304 ,  C09G1/02 ,  C09K3/14 ,  H01L21/4763

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.

摘要翻译： 制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。 这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。

公开(公告)号：US06913513B2

公开(公告)日：2005-07-05

申请号：US09784171

申请日：2001-02-16

申请人： Norio Kimura ,  Katsuya Okumura ,  Hiroyuki Yano

发明人： Norio Kimura ,  Katsuya Okumura ,  Hiroyuki Yano

IPC分类号： B24B37/013 ,  B24B37/10 ,  B24B49/04 ,  B24B49/12 ,  H01L21/304

CPC分类号： B24B37/26 ,  B24B37/013 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12

摘要： A polishing apparatus comprises a polishing table having a polishing surface, a top ring for holding a substrate and pressing a surface of the substrate against the polishing surface to polish the surface of the substrate, and at least one optical measuring device disposed adjacent to the outer peripheral portion of the polishing table and below the polishing surface of the polishing table for measuring the thickness of a layer formed on the surface of the substrate. The polishing apparatus further comprises at least one notch formed in the peripheral portion of the polishing table. The notch allows light emitted from the optical measuring device to pass therethrough and be incident on the surface of the substrate and allows light reflected from the surface of the substrate to pass therethrough and be incident on the optical measuring device.

摘要翻译： 抛光装置包括具有抛光表面的抛光台，用于保持基板的顶环，并将基板的表面压靠在抛光表面上以抛光基板的表面;以及至少一个光学测量装置，其邻近外部设置 抛光台的周边部分和抛光台的抛光表面下方，用于测量在基板表面上形成的层的厚度。 抛光装置还包括形成在抛光台的周边部分中的至少一个凹口。 该凹口允许从光学测量装置发射的光通过，并且入射到基板的表面上，并允许从基板的表面反射的光通过，并入射到光学测量装置上。

公开(公告)号：US20050118819A1

公开(公告)日：2005-06-02

申请号：US11025940

申请日：2005-01-03

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

IPC分类号： H01L21/3205 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212

摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

公开(公告)号：US20050064796A1

公开(公告)日：2005-03-24

申请号：US10865818

申请日：2004-06-14

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： C09G1/02 ,  B24B37/044

摘要： There is disclosed a polishing method comprising contacting a polishing surface of a semiconductor substrate with a polishing pad comprising a resin as a main component and attached to a turntable, and dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry comprising a resin particle, an inorganic particle, a polymerizable component, and a polymerization initiator.

摘要翻译： 公开了一种抛光方法，包括使半导体衬底的抛光表面与包括树脂作为主要组分并附着在转台上的抛光垫相接触，并将CMP浆料落在抛光垫上以抛光抛光表面，CMP浆料 包括树脂颗粒，无机颗粒，可聚合组分和聚合引发剂。

公开(公告)号：US20050009322A1

公开(公告)日：2005-01-13

申请号：US10909287

申请日：2004-08-03

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： There is disclosed a CMP slurry which comprises a solvent, abrasive grains, and a silicone-based surfactant having an HLB value ranging from 7 to 20.

摘要翻译： 公开了一种CMP浆料，其包含溶剂，磨粒和HLB值为7至20的硅氧烷基表面活性剂。

公开(公告)号：US06653267B2

公开(公告)日：2003-11-25

申请号：US09893961

申请日：2001-06-29

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C11D328

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

公开(公告)号：US06611060B1

公开(公告)日：2003-08-26

申请号：US09677743

申请日：2000-10-03

申请人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L2352

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤 的R2（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R1> R2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US06610629B2

公开(公告)日：2003-08-26

申请号：US09953970

申请日：2001-09-18

申请人： Hidenori Hinago ,  Hiroyuki Yano

发明人： Hidenori Hinago ,  Hiroyuki Yano

IPC分类号： B01J2300

CPC分类号： C07C253/24 ,  B01J23/002 ,  B01J23/18 ,  B01J23/20 ,  B01J23/28 ,  B01J27/0576 ,  B01J37/0045 ,  B01J2523/00 ,  C07C51/215 ,  Y02P20/52 ,  C07C57/04 ,  C07C255/08 ,  B01J2523/41 ,  B01J2523/53 ,  B01J2523/55 ,  B01J2523/56 ,  B01J2523/68 ,  B01J2523/64

摘要： Disclosed is a process for producing an oxide catalyst comprising, as component elements, molybdenum (Mo), vanadium (V), at least one element selected from the group consisting of the two elements of antimony (Sb) and tellurium (Te), and niobium (Nb), wherein the process comprises providing an aqueous raw material mixture containing compounds of the component elements of the oxide catalyst, and drying the aqueous raw material mixture, followed by calcination, and wherein, in the aqueous raw material mixture, at least a part of the niobium compound as one of the compounds of the component elements is present in the form of a complex thereof with a complexing agent comprising a compound having a hydroxyl group bonded to an oxygen atom or a carbon atom. Also disclosed is a process for producing (meth)acrylonitrile or (meth)acrylic acid, which comprises performing the ammoxidation or oxidation of propane or isobutane in the gaseous phase in the presence of the oxide catalyst.

公开(公告)号：US06609950B2

公开(公告)日：2003-08-26

申请号：US09897918

申请日：2001-07-05

申请人： Norio Kimura ,  Yu Ishii ,  Hirokuni Hiyama ,  Katsuya Okumura ,  Hiroyuki Yano

发明人： Norio Kimura ,  Yu Ishii ,  Hirokuni Hiyama ,  Katsuya Okumura ,  Hiroyuki Yano

IPC分类号： B24B4900

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/04 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76807

摘要： A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

摘要翻译： 研磨基板的方法能够减小抛光台的尺寸。 将要抛光的基底的表面以与研磨台的抛光表面接触的方式使得基底表面的一部分从抛光表面的外周向外延伸。 衬底围绕其中心轴线旋转，同时保持其表面与抛光台的抛光表面接触。 控制基板载体的姿态，使得在抛光操作期间基板的表面与抛光台的抛光表面保持平行。