Abstract:
A polishing system controls the durations over which different layers on a substrate are sequentially polished. The polishing system polishes an upper layer using an endpoint detection technique and polishes a lower layer using a closed loop control technique. Once the lower layer is detected during the course of polishing the upper layer, the polishing system automatically enters the recipe for polishing the lower layer under a closed loop control mode.
Abstract:
In a method of grinding a component such as a cam, a reduction in the finish grinding time is achieved by rotating the component through only a single revolution during a final grinding step and controlling the depth of cut and the component speed of rotation during that single revolution, so as to maintain a substantially constant specific metal removal rate during the final grinding step. The headstock (12) velocity can vary between 2 and 20 rpm during a single revolution of the cam during the final grinding step, with the lower speed used for grinding the flanks and the higher speed used during the grinding of the nose and base of the cam. Using a grinding machine (10) having 17.5 kw of available power for rotating the wheel, and cutting a grinding wheel in the range 80-120 mm diameter, typically the depth of cut lies in the range of 0.25 to 0.5 mm.
Abstract:
A dual semiconductor wafer slippage, or loss, and water-resistant sensor holder for chemical mechanical polishing (CMP) semiconductor fabrication equipment is disclosed. The holder has a body and a cover. The body is designed to hold two wafer slippage sensors at an angle to a vertical plane, such as substantially fifteen degrees, and has a window to allow the sensors to detect wafer slippage. The cover is situated over the window of the body to prevent slurry from spraying and drying onto the sensors during high-pressure rinse cleaning of a platen of the CMP semiconductor fabrication equipment.
Abstract:
There is provided an NC machine tool with tiltable spindle unit capable of being used both as vertical and inclined spindle type machine tools without restrictions on stroke and capable of easily carrying out tool measurement, alignment of a work piece with a tool, and truing. The NC machine tool includes: a spindle unit having a spindle serving both as a vertical spindle and an inclined spindle; and a tilting mechanism having a turning shaft for pivotably supporting the spindle unit on a vertical plane. The turning shaft has a center line of rotation which is arranged in the vicinity of a top end of a tool on a center line of the tool.
Abstract:
A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.
Abstract:
A belt wear optimizing system for a wood surface treating apparatus with a plurality of individual work stations arranged serially along an endless conveyor. Each station includes a working abrasive head along with an elevation control for adjustably positioning the contact surface of each abrasive head at a desired working distance from the opposed surface of the workpiece traveling along the endless conveyor. An incoming workpiece thickness detector is positioned at the infeed end, and additional workpiece thickness detectors are positioned downstream from each work station, with each being positioned to measure the thickness of the workpiece after it has passed through its preceding individual work station. In addition to a workpiece thickness detector at the infeed end, a signal generated by the thickness detector is transmitted to a central processor whereupon the head elevation control is actuated responsively to controllably and adjustably position the working head to its desired working position based upon a predetermined stock removal program for each individual head in the sequence.
Abstract:
A method and apparatus for simultaneously inspecting and grinding roll mills which utilizes a transducer assembly which produces a creeping wave propagation in conjunction with a couplant fluid provider and data acquisition circuit which allows the operator to see the crack and imperfections in on the surface of the mill rolls as they are rotated and to grind them off.
Abstract:
A grit blasting nozzle and nozzle fixture assembly provides for both rapid installation of the nozzle within the fixture, and precise alignment of the nozzle when installed in the fixture. Corresponding flat surfaces and shoulders on the nozzle and nozzle fixture orient the nozzle within the fixture, and a spring-biased pin engages an angled surface in the nozzle housing to fully seat the nozzle within the fixture. A proximity sensor facilitates consistent setting of the proper distance between the nozzle and the workpiece.
Abstract:
A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.
Abstract:
A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.