公开(公告)号：US20210305375A1

公开(公告)日：2021-09-30

申请号：US17068390

申请日：2020-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM

IPC: H01L29/36 ,  H01L29/78 ,  H01L29/16

Abstract: A semiconductor device includes a substrate; and a fin protruding from the substrate. The fin includes a first material and a second material. The fin includes a lower section, a middle section, and an upper section. The middle section has a smaller width at a middle portion than a width at lower and upper portions of the middle section. A concentration of the second material gradually decreases from the middle portion in upward and downward directions.

公开(公告)号：US20200169665A1

公开(公告)日：2020-05-28

申请号：US16615637

申请日：2018-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junseok SHIN ,  Sungmin KIM ,  Yeonhak KIM ,  Sewon KIM ,  Dongyoul PARK ,  Kihuk LEE

IPC: H04N5/232 ,  G03B5/04 ,  H04N5/225

Abstract: In an electronic device for controlling the shaking of a lens part of a camera module and an operation method for the electronic device according to various embodiments, the electronic device includes: a housing; a first camera that is accommodated in the housing and includes a first lens part capable of refracting light, reflected from an external object, through one surface of the housing, and a first optical image stabilizer (OIS) capable of compensating for the shaking of the first lens part; a second camera that is accommodated in the housing and includes a second lens part capable of refracting light, reflected from the the external object, through the one surface and a second optical image stabilizer capable of compensating for the shaking of the second lens part; and a control circuit, wherein the control circuit may be configured to: acquire an image of the external object by using the first camera and the second camera; acquire a first signal, corresponding to the shaking of the first lens part, and a second signal, corresponding to the shaking of the second lens part, while acquiring the image; verify compensation information that is compensated so that the movement amount of the first lens part or the second lens part according to a signal corresponding to a predetermined movement amount of the first lens part or the second lens part is substantially the same as the predetermined movement amount; determine a control signal on the basis of the first signal, the second signal, and the compensation information; and move the first lens part by using the first optical image stabilizer or the second lens part by using the second optical image stabilizer on the basis of the control signal. Various other embodiments are also possible.

公开(公告)号：US20190148379A1

公开(公告)日：2019-05-16

申请号：US16244540

申请日：2019-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop YOON ,  Sungmin KIM ,  Chiwon CHO

IPC: H01L27/092 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L27/11 ,  H01L27/088 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US20180246697A1

公开(公告)日：2018-08-30

申请号：US15905194

申请日：2018-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhee LEE ,  Sungmin KIM ,  Hangyul KIM ,  Yunjae LEE ,  Youngeun KIM

IPC: G06F3/16 ,  G06F3/0482 ,  G06F3/0484 ,  G06F3/0488

CPC classification number: G06F3/165 ,  G06F3/0482 ,  G06F3/0484 ,  G06F3/04883 ,  G06F3/167

Abstract: Provided are an electronic device and method thereof for executing a music-related application and supporting music composition by readily generating melody data including the main melody of music based on a drawing input from the user.

公开(公告)号：US20140029755A1

公开(公告)日：2014-01-30

申请号：US13947346

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjin KWON ,  Kwanhee HAN ,  Sungmin KIM

IPC: H04S7/00

CPC classification number: G06F3/162 ,  G06F3/0482 ,  G06F3/165 ,  H04R1/1041 ,  H04R3/04 ,  H04S7/308

Abstract: A method and an apparatus control sound signal output. The method of controlling a sound signal output in a terminal includes: storing receiver identifications and corresponding sound signal control parameters associated with each other by the terminal; providing a receiver selection interface capable of selecting one from a list of the receiver identifications and the receiver identifications included in the list by the terminal; receiving one receiver identification through the receiver selection interface; converting a digital sound signal into an analog sound signal by applying a sound signal control parameter corresponding to the received receiver identification; and outputting the analog sound signal.

Abstract translation: 方法和装置控制声音信号输出。 控制在终端中输出的声音信号的方法包括：存储由终端相互关联的接收机标识和对应的声音信号控制参数; 提供接收机选择接口，其能够从所述终端中包括在所述列表中的所述接收机标识和所述接收机标识的列表中选择一个; 通过接收机选择接口接收一个接收机标识; 通过应用与接收到的接收机标识对应的声音信号控制参数将数字声音信号转换成模拟声音信号; 并输出模拟声音信号。

公开(公告)号：US20250129288A1

公开(公告)日：2025-04-24

申请号：US18916329

申请日：2024-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol HAM ,  Byungjoon KANG ,  Giho KO ,  Sungmin KIM ,  Mihyun PARK ,  Insun PARK ,  Jinhye BAE ,  Kum Hee LEE ,  Minhyung CHO ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

Abstract: Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.

公开(公告)号：US20250006817A1

公开(公告)日：2025-01-02

申请号：US18409523

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device comprising: a substrate including an active pattern; a channel pattern on the active pattern, wherein the channel pattern includes a plurality of semiconductor patterns; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode extending in a first direction on the channel pattern, wherein the gate electrode includes an inner gate electrode between first and second semiconductor patterns among the plurality of semiconductor patterns; and an inner gate spacer between the inner gate electrode and the source/drain pattern, wherein the inner gate spacer includes a center portion and an edge portion, the center portion has a first thickness in a second direction, the edge portion has a second thickness in the second direction, the first thickness is greater than the second thickness, the first and second semiconductor patterns are adjacent to each other in a third direction.

公开(公告)号：US20240318077A1

公开(公告)日：2024-09-26

申请号：US18612457

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Sungmin KIM ,  Mihyun PARK ,  Jungmin OH ,  Cheol HAM

IPC: C09K13/00 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134

Abstract: An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.

公开(公告)号：US20230384556A1

公开(公告)日：2023-11-30

申请号：US18333142

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Youngjae HWANG

IPC: G02B7/08 ,  G02B7/28 ,  G03B13/36 ,  H02K11/215 ,  H02K11/33 ,  H02K11/35 ,  H02K41/035 ,  H02P7/025 ,  H04N23/51

CPC classification number: G02B7/08 ,  G02B7/28 ,  G03B13/36 ,  H02K11/215 ,  H02K11/33 ,  H02K11/35 ,  H02K41/0354 ,  H02P7/025 ,  H04N23/51

Abstract: An electronic device is provided. The electronic device includes a housing, a lens assembly disposed along an optical axis, and an AF actuator. The AF actuator includes a first AF magnet disposed on a first surface of the lens assembly facing a first direction, a second AF magnet disposed on a second surface facing a direction opposite to the first direction with respect to the lens assembly, a first AF coil disposed inside the housing to face the first AF magnet, a first driving circuit disposed at the center of the first AF coil to control a current applied to the first AF coil, a second AF coil disposed inside the housing to face the second AF magnet, and a second driving circuit disposed at the center of the second AF coil to control a current applied to the second AF coil.

公开(公告)号：US20230343786A1

公开(公告)日：2023-10-26

申请号：US18347023

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Soonmoon JUNG

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/16 ,  H01L29/161 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L21/18 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0922 ,  H01L29/66742 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78618 ,  H01L29/78684 ,  H01L29/78696 ,  H01L21/02603 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/187 ,  H01L21/28088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/82345 ,  H01L21/823475 ,  H01L29/66545 ,  H01L29/0673

Abstract: A semiconductor device includes a first transistor, a division pattern, and a second transistor sequentially stacked on a substrate. The first transistor includes a first gate structure, a first source/drain layer at each of opposite sides of the first gate structure, and first semiconductor patterns spaced apart from each other in a vertical direction. Each of the first semiconductor patterns extends through the first gate structure and contacts the first source/drain layer. The division pattern includes an insulating material. The second transistor includes a second gate structure, a second source/drain layer at each of opposite sides of the second gate structure, and second semiconductor patterns spaced apart from each other in the vertical direction. Each of the second semiconductor patterns extends through the second gate structure and contacts the second source/drain layer. The first source/drain layer does not directly contact the second source/drain layer.