公开(公告)号：US20230407174A1

公开(公告)日：2023-12-21

申请号：US18194875

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Hwang Suk KIM ,  Mihyun PARK ,  Jingmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Ham CHEOL

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US20240318077A1

公开(公告)日：2024-09-26

申请号：US18612457

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Sungmin KIM ,  Mihyun PARK ,  Jungmin OH ,  Cheol HAM

IPC: C09K13/00 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134

Abstract: An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.

公开(公告)号：US20240059967A1

公开(公告)日：2024-02-22

申请号：US18227454

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daihyun KIM ,  Taesoo KWON ,  Yeonsoek YOO ,  Mihyun PARK ,  Sangwon BAE ,  Hyosan LEE ,  Wook JANG

IPC: C09K13/06 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L29/66795

Abstract: An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.