公开(公告)号：US20230420515A1

公开(公告)日：2023-12-28

申请号：US18214861

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L27/088 ,  H01L21/8238 ,  H10B10/00

CPC classification number: H01L29/0673 ,  H01L29/42376 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  H01L27/088 ,  H01L21/823807 ,  H01L21/823828 ,  H10B10/12 ,  H10B10/18

Abstract: An integrated circuit semiconductor device includes a first transistor on a substrate. The first transistor includes a first gate electrode. A second transistor is on the substrate and is spaced apart from the first transistor. The second transistor includes a second gate electrode directly connected to the first gate electrode. A recess region is recessed in surfaces of the first and second gate electrodes and is arranged between the first and second gate electrodes. A first width of a first sidewall of the first gate electrode is less than a second width of a second sidewall of the first gate electrode adjacent to the recess region and opposite the first sidewall. A third width of a third sidewall of the second gate electrode is less than a fourth width of a fourth sidewall of the second gate electrode adjacent to the recess region and opposite the third sidewall.

公开(公告)号：US20220271129A1

公开(公告)日：2022-08-25

申请号：US17734457

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM

IPC: H01L29/36 ,  H01L29/16 ,  H01L29/78

Abstract: A semiconductor device includes a substrate; and a fin protruding from the substrate. The fin includes a first material and a second material. The fin includes a lower section, a middle section, and an upper section. The middle section has a smaller width at a middle portion than a width at lower and upper portions of the middle section. A concentration of the second material gradually decreases from the middle portion in upward and downward directions.

公开(公告)号：US20220181161A1

公开(公告)日：2022-06-09

申请号：US17678093

申请日：2022-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Daewon Ha

IPC: H01L21/306 ,  H01L21/20 ,  H01L21/3105 ,  H01L21/762

Abstract: Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

公开(公告)号：US20220020880A1

公开(公告)日：2022-01-20

申请号：US17126260

申请日：2020-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06 ,  H01L21/84 ,  H01L29/423

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a first semiconductor pattern on a substrate, the first semiconductor pattern including a lower channel; a second semiconductor pattern on the first semiconductor pattern and spaced apart from the first semiconductor pattern in a vertical direction, the second semiconductor pattern including an upper channel extending in the vertical direction; a gate electrode covering the lower channel and surrounding the upper channel; and source/drain patterns on opposite sides of the upper channel, wherein the substrate and the first semiconductor pattern have a doping concentration of 1019/cm3 or less.

公开(公告)号：US20200310741A1

公开(公告)日：2020-10-01

申请号：US16896417

申请日：2020-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjin KWON ,  Kwanhee HAN ,  Sungmin KIM

IPC: G06F3/16 ,  H04S7/00 ,  H04R1/10 ,  H04R3/04 ,  G06F3/0482

Abstract: A method and an apparatus control sound signal output. The method of controlling a sound signal output in a terminal includes: storing receiver identifications and corresponding sound signal control parameters associated with each other by the terminal; providing a receiver selection interface capable of selecting one from a list of the receiver identifications and the receiver identifications included in the list by the terminal; receiving one receiver identification through the receiver selection interface; converting a digital sound signal into an analog sound signal by applying a sound signal control parameter corresponding to the received receiver identification; and outputting the analog sound signal.

公开(公告)号：US20230276692A1

公开(公告)日：2023-08-31

申请号：US18173162

申请日：2023-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Byungjoon Kang ,  Seungyeon KWAK ,  Sungmin KIM ,  Juhee MOON ,  Sunghun LEE ,  Shingo ISHIHARA ,  Byoungki CHOI

IPC: H10K85/30 ,  H10K50/11 ,  H10K50/15

CPC classification number: H10K85/342 ,  H10K50/11 ,  H10K50/15 ,  H10K85/361 ,  H10K2101/30

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device, the light-emitting device including: a first electrode; a second electrode; an emission layer arranged between the first electrode and the second electrode; and a buffer layer arranged between the first electrode and the emission layer, wherein the buffer layer is in direct contact with the emission layer, the emission layer includes a first compound represented by Formula 1, and the buffer layer includes a second compound represented by Formula 5. The first compound and the second compound are respectively the same as those described in the present specification.

公开(公告)号：US20170352664A1

公开(公告)日：2017-12-07

申请号：US15685657

申请日：2017-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop YOON ,  Sungmin KIM ,  Chiwon CHO

IPC: H01L27/092 ,  H01L27/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L23/485 ,  H01L29/165 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US20170046116A1

公开(公告)日：2017-02-16

申请号：US15230570

申请日：2016-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hangyul KIM ,  Taemin CHO ,  Sungmin KIM ,  Min-Hee LEE ,  Yunjae LEE

IPC: G06F3/16 ,  G06F3/0481 ,  G06F3/0488 ,  G06F3/0482

CPC classification number: G06F3/162 ,  G06F3/04817 ,  G06F3/04842 ,  G06F3/04883 ,  G06F3/165

Abstract: A method for use in an electronic device, comprising: displaying a looper screen including a plurality of loop items; displaying, on the looper screen, a first shortcut item that is associated with one or more of the loop items; and reproducing a first music pattern associated with one or more loop items in response to a first selection of the first shortcut item.

Abstract translation: 一种在电子设备中使用的方法，包括：显示包括多个循环项的触发器屏幕; 在操纵屏幕上显示与一个或多个循环项目相关联的第一快捷项目; 以及响应于所述第一快捷项目的第一选择，再现与一个或多个循环项相关联的第一音乐模式。

公开(公告)号：US20160321026A1

公开(公告)日：2016-11-03

申请号：US15207597

申请日：2016-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjin KWON ,  Kwanhee HAN ,  Sungmin KIM

IPC: G06F3/16 ,  G06F3/0482

Abstract: A method and an apparatus control sound signal output. The method of controlling a sound signal output in a terminal includes: storing receiver identifications and corresponding sound signal control parameters associated with each other by the terminal; providing a receiver selection interface capable of selecting one from a list of the receiver identifications and the receiver identifications included in the list by the terminal; receiving one receiver identification through the receiver selection interface; converting a digital sound signal into an analog sound signal by applying a sound signal control parameter corresponding to the received receiver identification; and outputting the analog sound signal.

Abstract translation: 方法和装置控制声音信号输出。 控制在终端中输出的声音信号的方法包括：存储由终端相互关联的接收机标识和对应的声音信号控制参数; 提供接收机选择接口，其能够从所述终端中包括在所述列表中的所述接收机标识和所述接收机标识的列表中选择一个; 通过接收机选择接口接收一个接收机标识; 通过应用与接收到的接收机标识对应的声音信号控制参数将数字声音信号转换成模拟声音信号; 并输出模拟声音信号。

公开(公告)号：US20240395862A1

公开(公告)日：2024-11-28

申请号：US18509925

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM ,  Yoon-Hee LEE ,  Yechan KIM

IPC: H01L29/06 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; source/drain patterns spaced apart in a first direction on the semiconductor substrate; and channel patterns on the semiconductor substrate, wherein at least one of the channel patterns is between adjacent source/drain patterns among the source/drain patterns, wherein at least one of the channel patterns includes a plurality of semiconductor patterns, and the plurality of semiconductor patterns are spaced apart from each other in a second direction that is perpendicular to an upper surface of the semiconductor substrate, wherein the semiconductor substrate includes a {110} crystal plane, wherein at least one of the channel patterns includes a surface pattern, wherein the surface pattern includes first surfaces and second surfaces, wherein the first surfaces include protruding edges, wherein the second surfaces are respectively connected to the first surfaces through protruding edges, and wherein the protruding edges are arranged in a third direction.