公开(公告)号：US20190148379A1

公开(公告)日：2019-05-16

申请号：US16244540

申请日：2019-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop YOON ,  Sungmin KIM ,  Chiwon CHO

IPC: H01L27/092 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L27/11 ,  H01L27/088 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US20170352664A1

公开(公告)日：2017-12-07

申请号：US15685657

申请日：2017-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop YOON ,  Sungmin KIM ,  Chiwon CHO

IPC: H01L27/092 ,  H01L27/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L23/485 ,  H01L29/165 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.