Abstract:
A phase change material layer includes germanium (Ge), antimony (Sb), tellurium (Te) and at least one impurity elements. An atomic concentration of impurity elements ranges from about 0
Abstract:
A semiconductor device includes a first substrate structure including a first decoder circuit region, a second decoder circuit region, and a page buffer circuit region, and a second substrate structure connected to the first substrate structure. The second substrate structure includes a first cell structure that includes first horizontally extending gate electrodes, and a second cell structure that includes second horizontally extending gate electrodes. The second cell structure is disposed below the first cell structure. A first stair structure is disposed to one side of the first and second cell structures, and a second stair structure is disposed to a second side opposite the first side. a dummy structure is disposed below the first stair structure. First contact plugs pass through the first stair structure and the first dummy structure and are respectively connected to the first gate electrodes, and second contact plugs pass through the second stair structure and are respectively connected to the second gate electrodes.
Abstract:
Disclosed is a semiconductor device comprising a peripheral circuit structure on a first substrate, a cell array structure on the peripheral circuit structure, and a backside structure on the cell array structure. The cell array structure includes a stack structure including gate electrodes and interlayer dielectric layers that are alternately stacked, through plugs that extend in a first direction through the stack structure and each including a first surface adjacent to the backside structure and a second surface opposite to the first surface, a middle circuit structure between the stack structure and the peripheral circuit structure and connected to the peripheral circuit structure, and a connection plug connected to the middle circuit structure and the backside structure. The through plugs include a first through plug connected through the first surface to the backside structure, and a second through plug connected through the second surface to the middle circuit structure.
Abstract:
A light source capable of operating third and fourth reflection mirrors included in a beam splitting device in conjunction with movements of first and second reflection mirrors included in a beam transfer device and an optical assembly, respectively. The third and fourth reflection mirrors are disposed on optical paths of a pre-pulse and a main pulse emitted from first and second pulse generators, respectively. The light source operates the third and fourth reflection mirrors to offset an excessive compensation of the main pulse caused in a process of compensating for an optical path error of the pre-pulse. The light source may be included in an extreme ultraviolet light source system.
Abstract:
A memory module including: a first printed circuit board; a first socket and a second socket; and a daisy chain pattern formed in a first region of the first printed circuit board and connected to the first socket and the second socket, wherein an electrical signal on the daisy chain pattern is transferred to a host device when the first socket and the second socket are connected to the host device.
Abstract:
A printed circuit board (PCB) includes: an insulation substrate; a first pad on the insulation substrate; and a second pad on the insulation substrate and spaced apart from the first pad, wherein the second pad has a size substantially the same as a size of the first pad, wherein the first pad includes a first recess configured to receive a first electrode of a passive element, wherein the second pad includes a second recess receiving a second electrode of the passive element, wherein the first recess has a depth substantially the same as a thickness of the first pad, wherein the second recess has a depth substantially the same as a thickness of the second pad, wherein each of the first recess and the second recess exposes an upper surface of the insulation substrate.
Abstract:
A module board and a memory module are provided. The module board includes a first branch line for connecting a clock signal terminal disposed on at least one surface to a first branch point; a first signal line for connecting the first branch point to a first module clock signal terminal; a second signal line for connecting the first module clock signal terminal to the kth module clock signal terminal and a first termination resistance terminal; a third signal line for connecting the first branch point to a (k+1)th module clock signal terminal; and a fourth signal line for connecting the (k+1)th module clock signal terminal to a 2kth module clock signal terminal and the second termination resistance terminal, wherein a length of the third signal line is greater than a sum of a length of the first signal line and a length of the second signal line.
Abstract:
A light source capable of operating third and fourth reflection mirrors included in a beam splitting device in conjunction with movements of first and second reflection mirrors included in a beam transfer device and an optical assembly, respectively. The third and fourth reflection mirrors are disposed on optical paths of a pre-pulse and a main pulse emitted from first and second pulse generators, respectively. The light source operates the third and fourth reflection mirrors to offset an excessive compensation of the main pulse caused in a process of compensating for an optical path error of the pre-pulse. The light source may be included in an extreme ultraviolet light source system.
Abstract:
A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.
Abstract:
An apparatus and a method to support visible and audible communications using various multimedia services are provided. A method to provide communications using a multimedia service in a server of a communication system is provided. The method includes receiving a voice call connection request for a second device from a first device. The method also includes providing the first device with visual multimedia information generated in advance, over a web network in relation to the second device. The method further includes connecting a voice call between the first device and the second device.