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21.发明申请公开(公告)号：US20170178920A1
公开(公告)日：2017-06-22
申请号：US15449799
申请日：2017-03-03
发明人： Nikhil Dole , Eric A. Hudson , George Matamis
IPC分类号： H01L21/3065 , C23C16/52 , C23C16/455 , H01L21/67 , H01J37/32
CPC分类号： H01L21/30655 , H01J37/32091 , H01J37/32137 , H01J37/32889 , H01J37/32899 , H01J2237/3321 , H01J2237/334 , H01J2237/3347 , H01L21/02112 , H01L21/02118 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/31116 , H01L21/67069 , H01L28/00
摘要： Methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate are provided. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective film on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective film may be deposited under different conditions (e.g., pressure, duration of reactant delivery, duration of plasma exposure, RF power, and/or RF duty cycle, etc.) in different deposition operations. Such conditions may affect the degree of conformality at which the protective film forms. In various embodiments, one or more protective films may be sub-conformal. In these or other embodiments, one or more other protective films may be conformal.
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公开(公告)号：US20160358784A1
公开(公告)日：2016-12-08
申请号：US15237521
申请日：2016-08-15
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67 , H01L21/311 , H01L21/3213
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32091 , H01J37/32357 , H01L21/31116 , H01L21/31138 , H01L21/67069
摘要： Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.
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公开(公告)号：US20160343580A1
公开(公告)日：2016-11-24
申请号：US15225489
申请日：2016-08-01
发明人： Eric A. Hudson
IPC分类号： H01L21/311 , H01J37/32 , H01L21/67 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/31116 , C23C16/45525 , C23C16/45544 , C23C16/50 , C23C16/52 , H01J37/32091 , H01J37/3244 , H01J37/32513 , H01J37/32577 , H01J37/32623 , H01J37/32651 , H01J37/32871 , H01J37/32899 , H01L21/02112 , H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/30655 , H01L21/3105 , H01L21/31144 , H01L21/67069 , H01L27/1087 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.
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公开(公告)号：US20160260620A1
公开(公告)日：2016-09-08
申请号：US15157303
申请日：2016-05-17
IPC分类号： H01L21/311 , H01L21/02 , H01L27/108 , C23C16/52 , H01J37/32 , C23C16/50 , C23C16/455 , H01L21/3065 , H01L27/115
CPC分类号： H01L21/31116 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32513 , H01J37/32577 , H01J37/32623 , H01J37/32651 , H01J37/32871 , H01J37/32899 , H01J2237/334 , H01L21/02112 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/30655 , H01L27/108 , H01L27/115
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.
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公开(公告)号：US20160181117A1
公开(公告)日：2016-06-23
申请号：US14612095
申请日：2015-02-02
发明人： Reza Arghavani , Shashank C. Deshmukh , Eric A. Hudson , Tom Kamp , Samantha Tan , Gerardo Adrian Delgadino
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32 , H01L21/263
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32899 , H01L21/6719 , H01L21/67213 , H01L21/76897
摘要： The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.
摘要翻译： 本文的实施例涉及用于蚀刻电介质材料中凹陷特征的方法和装置。 在各种实施例中，在两个蚀刻操作中形成凹陷特征。 第一蚀刻操作部分地蚀刻特征并且可以在配置成产生电容耦合等离子体的反应器中进行。 第一蚀刻操作可能在底层半导体材料由于穿过半导体材料顶部的电介质的离子穿透而经受显着的损坏之前结束。 第二蚀刻操作可以在配置成产生电感耦合等离子体的反应器中进行。 第一和第二蚀刻操作本身可以是多步循环过程。
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公开(公告)号：US09257300B2
公开(公告)日：2016-02-09
申请号：US13937930
申请日：2013-07-09
发明人： Ranadeep Bhowmick , Eric A. Hudson
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311 , H01L21/3213 , H01L21/033
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/31116 , H01L21/31138 , H01L21/32139
摘要： A method for etching features into an etch layer disposed below a patterned mask is provided. At least three cycles are provided, where each cycle comprises providing an ion bombardment, by creating a plasma, of the etch layer to create activated sites of surface radicals in parts of the etch layer exposed by the patterned mask, extinguishing the plasma, exposing the etch layer to a plurality of fluorocarbon containing molecules, which causes the fluorocarbon containing molecules to selectively bind to the activated sites, wherein the selective binding is self limiting, and providing an ion bombardment of the etch layer to initiate an etch reaction between the fluorocarbon containing molecule and the etch layer, wherein the ion bombardment of the etch layer to initiate an etch reaction causes the formation of volatile etch products formed from the etch layer and the fluorocarbon containing molecule.
摘要翻译： 提供了一种用于将特征蚀刻到设置在图案化掩模下方的蚀刻层中的方法。 提供至少三个循环，其中每个循环包括通过产生等离子体提供蚀刻层的离子轰击，以在被图案化掩模暴露的部分蚀刻层中产生表面自由基的活化位点，使等离子体暴露 蚀刻层到多个含碳氟化合物的分子，其使含碳氟化合物的分子选择性地结合到活化位点，其中选择性结合是自限性的，并且提供蚀刻层的离子轰击以引发含氟碳含量 分子和蚀刻层，其中蚀刻层的离子轰击以引发蚀刻反应导致形成由蚀刻层和含碳氟化合物分子形成的挥发性蚀刻产物。
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公开(公告)号：US20230298896A1
公开(公告)日：2023-09-21
申请号：US18003877
申请日：2022-02-22
发明人： Gregory Clinton Veber , Shuang Pi , Taner Ozel , Eric A. Hudson , Qing Xu , Merrett Wong , Amit Mukhopadhyay , Walter Thomas Ralston
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/3205 , H01L21/56
CPC分类号： H01L21/30655 , H01L21/3081 , H01L21/32053 , H01L21/56
摘要： High aspect ratio features are formed in a substrate using etching and deposition processes. A partially etched feature is formed by exposure to plasma in a plasma etch chamber. A metal-based liner is subsequently deposited in the partially etched feature using the same plasma etch chamber. The metal-based liner is robust and prevents lateral etch in subsequent etching operations. The metal-based liner may be deposited at temperatures or pressures comparable to temperatures or pressures for etch processes. The metal-based liner may be localized in certain portions of the partially etched feature. Etching proceeds within the feature after deposition without lateral etching in regions where the metal-based liner is deposited.
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公开(公告)号：US20220362803A1
公开(公告)日：2022-11-17
申请号：US17754020
申请日：2020-10-15
摘要： Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.
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29.发明授权公开(公告)号：US10170323B2
公开(公告)日：2019-01-01
申请号：US15440842
申请日：2017-02-23
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687 , H01J37/32 , H01L21/311 , C23C16/02 , C23C16/04 , C23C16/38 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/56 , H01L21/285 , H01L21/768 , H01L27/108 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
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公开(公告)号：US20180286707A1
公开(公告)日：2018-10-04
申请号：US15475021
申请日：2017-03-30
IPC分类号： H01L21/67 , H01L21/311 , H01L21/683 , H01J37/32
摘要： Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures and particular classes of reactants. In various examples, the substrate may be etched at a temperature of about −20° C. or lower, using a mixture of reactants that includes at least one reactant that is an iodine-containing fluorocarbon, an iodine-containing fluoride, a bromine-containing fluorocarbon, a sulfur-containing reactant, or one of another select set of reactants. In various embodiments, the combination of low processing temperature with particular reactants results in very effective bow control.
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