公开(公告)号：US10361092B1

公开(公告)日：2019-07-23

申请号：US15903865

申请日：2018-02-23

申请人： Lam Research Corporation

发明人： Francis Sloan Roberts ,  Eric Hudson

IPC分类号： H01L21/311 ,  H01L27/105 ,  H01L21/8239

摘要： A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant, with a coolant temperature below −20° C. An etch gas comprising a metal containing component, a carbon containing component, and a halogen containing component is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched in the stack with respect to the patterned mask.

公开(公告)号：US20180286707A1

公开(公告)日：2018-10-04

申请号：US15475021

申请日：2017-03-30

申请人： Lam Research Corporation

发明人： Eric A. Hudson ,  Francis Sloan Roberts

IPC分类号： H01L21/67 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32

摘要： Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures and particular classes of reactants. In various examples, the substrate may be etched at a temperature of about −20° C. or lower, using a mixture of reactants that includes at least one reactant that is an iodine-containing fluorocarbon, an iodine-containing fluoride, a bromine-containing fluorocarbon, a sulfur-containing reactant, or one of another select set of reactants. In various embodiments, the combination of low processing temperature with particular reactants results in very effective bow control.