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1.发明申请TECHNIQUE TO DEPOSIT METAL-CONTAINING SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH 有权用于高比例圆柱体蚀刻的金属含金属钝化技术公开(公告)号：US20160163558A1
公开(公告)日：2016-06-09
申请号：US14803578
申请日：2015-07-20
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/02
CPC分类号： H01L21/30655 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/38 , C23C16/40 , C23C16/4408 , C23C16/45542 , C23C16/45546 , C23C16/505 , C23C16/56 , H01J37/32165 , H01J37/32568 , H01J37/32577 , H01J37/32715 , H01J37/32908 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/68785 , H01L21/76802 , H01L21/76843 , H01L27/10847 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
摘要翻译： 本文的各种实施例涉及用于在半导体衬底上的电介质堆叠中形成凹陷特征的方法，装置和系统。 以循环方式采用分离的蚀刻和沉积操作。 每个蚀刻操作部分地蚀刻该特征。 每个沉积操作在特征的侧壁上形成保护涂层（例如，含金属的涂层），以防止在蚀刻操作期间电介质材料的横向蚀刻。 保护涂层可以使用沿着侧壁的大致整个长度形成保护涂层的方法进行沉积。 可以使用导致基本上完全的侧壁涂层的特定反应机理来沉积保护性涂层。 已经显示含金属涂层在蚀刻操作期间提供特别好的抗横向蚀刻性能。 在一些情况下，可以使用双层方法将保护涂层沉积在部分蚀刻特征的侧壁上。
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2.发明授权公开(公告)号：US10170323B2
公开(公告)日：2019-01-01
申请号：US15440842
申请日：2017-02-23
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687 , H01J37/32 , H01L21/311 , C23C16/02 , C23C16/04 , C23C16/38 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/56 , H01L21/285 , H01L21/768 , H01L27/108 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
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3.发明申请公开(公告)号：US20170170026A1
公开(公告)日：2017-06-15
申请号：US15440842
申请日：2017-02-23
IPC分类号： H01L21/3065 , H01L21/768 , H01L21/285 , H01L27/11556 , H01L27/11582 , H01L27/108 , H01L21/67 , C23C16/02 , C23C16/04 , C23C16/38 , C23C16/40 , C23C16/455 , C23C16/505 , C23C16/44 , C23C16/56 , H01L21/311
CPC分类号： H01L21/30655 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/38 , C23C16/40 , C23C16/4408 , C23C16/45542 , C23C16/45546 , C23C16/505 , C23C16/56 , H01J37/32165 , H01J37/32568 , H01J37/32577 , H01J37/32715 , H01J37/32908 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/68785 , H01L21/76802 , H01L21/76843 , H01L27/10847 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
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4.发明授权公开(公告)号：US09620377B2
公开(公告)日：2017-04-11
申请号：US14803578
申请日：2015-07-20
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/30655 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/38 , C23C16/40 , C23C16/4408 , C23C16/45542 , C23C16/45546 , C23C16/505 , C23C16/56 , H01J37/32165 , H01J37/32568 , H01J37/32577 , H01J37/32715 , H01J37/32908 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/68785 , H01L21/76802 , H01L21/76843 , H01L27/10847 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
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