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    PERIPHERAL RF FEED AND SYMMETRIC RF RETURN FOR SYMMETRIC RF DELIVERY
    2.
    发明申请
    PERIPHERAL RF FEED AND SYMMETRIC RF RETURN FOR SYMMETRIC RF DELIVERY 审中-公开

    公开(公告)号：US20200161097A1

    公开(公告)日：2020-05-21

    申请号：US16750001

    申请日：2020-01-23

    申请人： Lam Research Corporation

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

    IPC分类号： H01J37/32 ,  H01L21/683

    摘要： A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

    Control of impedance of RF delivery path
    4.
    发明授权
    Control of impedance of RF delivery path 有权

    公开(公告)号：US10157730B2

    公开(公告)日：2018-12-18

    申请号：US15194452

    申请日：2016-06-27

    申请人： Lam Research Corporation

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

    IPC分类号： H01J37/32

    摘要： A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

    TUNABLE RF FEED STRUCTURE FOR PLASMA PROCESSING
    7.
    发明申请
    TUNABLE RF FEED STRUCTURE FOR PLASMA PROCESSING 审中-公开
    用于等离子体处理的可控射频馈电结构

    公开(公告)号：US20150243483A1

    公开(公告)日：2015-08-27

    申请号：US14187163

    申请日：2014-02-21

    申请人： Lam Research Corporation

    发明人： Zhigang Chen ,  Rajinder Dhindsa

    IPC分类号： H01J37/32 ,  H01L21/67

    CPC分类号： H01J37/32183 ,  H01J37/32082 ,  H01J37/32174

    摘要： A chamber for plasma processing semiconductor wafers is provided, comprising: a support chuck disposed in the chamber; a top electrode disposed over the support chuck and within the chamber; an RF supply rod electrically connected between an RF power source and the support chuck for providing RF power to the chamber, the RF supply rod having a corrugated surface, the corrugated surface having recessed and protruded regions that are arranged in a lengthwise repeating pattern along a segment of the RF supply rod, the corrugated surface producing a lengthwise minimum surface path along the segment that is greater than a length of the segment, the lengthwise minimum surface path defining a target length of the RF supply rod.

    摘要翻译： 提供了一种用于等离子体处理半导体晶片的腔室，包括：设置在腔室中的支撑卡盘; 设置在所述支撑卡盘上并在所述腔室内的顶部电极; RF供应杆电连接在RF电源和支撑卡盘之间，用于向腔室提供RF功率，RF供应杆具有波纹表面，波纹表面具有沿着纵向重复图案沿着沿着纵向重复图案布置的凹入和突出区域 所述波纹表面沿着所述段产生沿着所述段的长度的纵向最小表面路径，所述纵向最小表面路径限定所述RF供应杆的目标长度。

    Control of Impedance of RF Return Path
    9.
    发明申请
    Control of Impedance of RF Return Path 有权
    RF返回路径阻抗控制

    公开(公告)号：US20150091440A1

    公开(公告)日：2015-04-02

    申请号：US14043525

    申请日：2013-10-01

    申请人： Lam Research Corporation

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32183

    摘要： A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

    摘要翻译： 用于控制射频（RF）返回路径的阻抗的系统包括还包括匹配电路的火柴盒。 该系统还包括耦合到火柴盒的RF发生器，以经由RF供应路径的第一部分向火柴盒提供RF供应信号。 RF发生器耦合到火柴盒，以经由RF返回路径的第一部分接收RF返回信号。 该系统还包括经由RF返回路径的第二部分耦合到开关电路的开关电路和等离子体电抗器。 等离子体反应器经由RF供应路径的第二部分耦合到匹配电路。 该系统包括耦合到开关电路的控制器，该控制器被配置为基于调谐配方来控制开关电路以改变RF返回路径的阻抗。

    System, Method and Apparatus for Generating Pressure Pulses in Small Volume Confined Process Reactor
    10.
    发明申请
    System, Method and Apparatus for Generating Pressure Pulses in Small Volume Confined Process Reactor 有权
    用于在小体积密闭过程反应器中产生压力脉冲的系统，方法和装置

    公开(公告)号：US20150064920A1

    公开(公告)日：2015-03-05

    申请号：US14012802

    申请日：2013-08-28

    申请人： Lam Research Corporation

    发明人： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

    IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

    摘要： A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

    摘要翻译： 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 电导控制结构可移动地设置在靠近所述至少一个出口端口并且能够限制通过所述至少一个出口端口的出口流到第一流量并且能够将通过所述至少一个出口端口的出口流增加到 第二流量，其中电导控制结构限制出口流量在等离子体处理期间由与控制器设定的选定处理状态对应的第一流量与第二流量之间移动。