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    Multi zone gas injection upper electrode system
    3.
    发明授权
    Multi zone gas injection upper electrode system 有权

    公开(公告)号：US11594400B2

    公开(公告)日：2023-02-28

    申请号：US16845723

    申请日：2020-04-10

    申请人： Lam Research Corporation

    发明人： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

    IPC分类号： H01J37/32 ,  H01L21/67

    摘要： A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

    MULTIPLE CONTROL MODES
    4.
    发明申请
    MULTIPLE CONTROL MODES 审中-公开

    公开(公告)号：US20170084432A1

    公开(公告)日：2017-03-23

    申请号：US15369110

    申请日：2016-12-05

    申请人： Lam Research Corporation

    发明人： John C. Valcore, JR. ,  Eric Allen Hudson ,  Ryan Bise

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32935 ,  H01J37/32146 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32926 ,  H01J37/3299

    摘要： Systems and methods for using variables based on multiple states associated with a plasma system are described. A method includes determining whether the state associated with the plasma system is a first, second, or third state and determining a first variable upon determining that the state is the first state. The method further includes determining a second variable upon determining that the state is the second state and determining a third variable upon determining that the state is the third state. The method includes determining whether each of the first variable, the second variable, and the third variable is within a corresponding range from a corresponding threshold. The method includes providing an instruction to change power supplied to a plasma chamber upon determining that the first, second, or third variable is outside the corresponding range from the corresponding threshold.

    MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM
    5.
    发明申请
    MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM 审中-公开

    公开(公告)号：US20200243307A1

    公开(公告)日：2020-07-30

    申请号：US16845723

    申请日：2020-04-10

    申请人： Lam Research Corporation

    发明人： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

    IPC分类号： H01J37/32

    摘要： A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

    Active feedback control of subsystems of a process module
    6.
    发明授权
    Active feedback control of subsystems of a process module 有权

    公开(公告)号：US10366869B2

    公开(公告)日：2019-07-30

    申请号：US15818590

    申请日：2017-11-20

    申请人： Lam Research Corporation

    发明人： Scott Riggs ,  Ryan Bise ,  John Valcore ,  Eric Hudson ,  Ranadeep Bhowmick

    IPC分类号： H01J37/32 ,  G06F1/12 ,  G06F1/08

    摘要： A communications system for synchronizing control signals between subsystems coupled to a process module used for processing a substrate. A distributed controller coupled to the subsystems is configured to initiate process steps, each step having a step period. A distributed clock module includes a master clock having a clock speed including clock cycles, each clock cycle having a duration that is pre-correlated to a feedback loop within which synchronized control signals are delivered to and received from the subsystems by the distributed clock module. A predefined number of clock cycles is assigned by the distributed clock module for performing a corresponding number of feedback loops for transitioning between process steps. The predefined number of clock cycles are restricted to a fraction of the step period.

    Gas supply delivery arrangement including a gas splitter for tunable gas flow control
    8.
    发明授权
    Gas supply delivery arrangement including a gas splitter for tunable gas flow control 有权

    公开(公告)号：US10431431B2

    公开(公告)日：2019-10-01

    申请号：US14886458

    申请日：2015-10-19

    申请人： Lam Research Corporation

    发明人： Mark Taskar ,  Iqbal Shareef ,  Anthony Zemlock ,  Ryan Bise ,  Nathan Kugland

    IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  C23C14/22 ,  H01L21/67 ,  C23C16/50 ,  H01L21/311

    摘要： A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

    Multiple control modes
    9.
    发明授权
    Multiple control modes 有权

    公开(公告)号：US10325759B2

    公开(公告)日：2019-06-18

    申请号：US15369110

    申请日：2016-12-05

    申请人： Lam Research Corporation

    发明人： John C. Valcore, Jr. ,  Eric Allen Hudson ,  Ryan Bise

    IPC分类号： H01J37/32

    摘要： Systems and methods for using variables based on multiple states associated with a plasma system are described. A method includes determining whether the state associated with the plasma system is a first, second, or third state and determining a first variable upon determining that the state is the first state. The method further includes determining a second variable upon determining that the state is the second state and determining a third variable upon determining that the state is the third state. The method includes determining whether each of the first variable, the second variable, and the third variable is within a corresponding range from a corresponding threshold. The method includes providing an instruction to change power supplied to a plasma chamber upon determining that the first, second, or third variable is outside the corresponding range from the corresponding threshold.

    ACTIVE FEEDBACK CONTROL OF SUBSYSTEMS OF A PROCESS MODULE
    10.
    发明申请
    ACTIVE FEEDBACK CONTROL OF SUBSYSTEMS OF A PROCESS MODULE 审中-公开

    公开(公告)号：US20190157039A1

    公开(公告)日：2019-05-23

    申请号：US15818590

    申请日：2017-11-20

    申请人： Lam Research Corporation

    发明人： Scott Riggs ,  Ryan Bise ,  John Valcore ,  Eric Hudson ,  Ranadeep Bhowmick

    IPC分类号： H01J37/32 ,  G06F1/12

    CPC分类号： H01J37/3299 ,  G06F1/08 ,  G06F1/12

    摘要： A communications system for synchronizing control signals between subsystems coupled to a process module used for processing a substrate. A distributed controller coupled to the subsystems is configured to initiate process steps, each step having a step period. A distributed clock module includes a master clock having a clock speed including clock cycles, each clock cycle having a duration that is pre-correlated to a feedback loop within which synchronized control signals are delivered to and received from the subsystems by the distributed clock module. A predefined number of clock cycles is assigned by the distributed clock module for performing a corresponding number of feedback loops for transitioning between process steps. The predefined number of clock cycles are restricted to a fraction of the step period.