公开(公告)号：US20200243307A1

公开(公告)日：2020-07-30

申请号：US16845723

申请日：2020-04-10

申请人： Lam Research Corporation

发明人： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

IPC分类号： H01J37/32

摘要： A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

公开(公告)号：US10079154B1

公开(公告)日：2018-09-18

申请号：US15463374

申请日：2017-03-20

申请人： Lam Research Corporation

发明人： Daniel Le ,  Gerardo Delgadino

IPC分类号： H01L21/311

摘要： A method for selectively etching SiN with respect to SiO or SiGe or Si of a structure is provided comprising providing a plurality of cycles of atomic layer etching. Each cycle comprises a fluorinated polymer deposition phase comprising flowing a fluorinated polymer deposition gas comprising a hydrofluorocarbon gas into the plasma processing chamber, forming the fluorinated polymer deposition gas into a plasma, which deposits a hydrofluorocarbon polymer layer on the structure, and stopping the flow of the fluorinated polymer deposition gas into the plasma processing chamber and an activation phase comprising flowing an activation gas comprising at least one of NH3 or H2 into the plasma processing chamber, forming the activation gas into a plasma, wherein plasma components from NH3 or H2 cause SiN to be selectively etched with respect to SiO or SiGe or Si, and stopping the flow of the activation gas into the plasma processing chamber.

公开(公告)号：US09779956B1

公开(公告)日：2017-10-03

申请号：US15425899

申请日：2017-02-06

申请人： Lam Research Corporation

发明人： Xin Zhang ,  Alan Jensen ,  Gerardo Delgadino ,  Daniel Le

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/31116 ,  H01L21/67109 ,  H01L21/6831

摘要： A method for selectively etching SiO and SiN with respect to SiGe or Si of a structure is provided. A plurality of cycles of atomic layer etching is provided, where each cycle comprises a fluorinated polymer deposition phase and an activation phase. The fluorinated polymer deposition phase comprises flowing a fluorinated polymer deposition gas comprising a fluorocarbon gas, forming the fluorinated polymer deposition gas into a plasma, which deposits a fluorocarbon polymer layer on the structure, and stopping the flow of the fluorinated polymer deposition gas. The activation phase comprises flowing an activation gas comprising an inert bombardment gas and H2, forming the activation gas into a plasma, wherein the inert bombardment gas activates fluorine in the fluorinated polymer which with the plasma components from H2 cause SiO and SiN to be selectively etched with respect to SiGe and Si, and stopping the flow of the activation gas.

公开(公告)号：US09040430B2

公开(公告)日：2015-05-26

申请号：US13929530

申请日：2013-06-27

申请人： Lam Research Corporation

发明人： John M. Nagarah ,  Gerardo Delgadino

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02093 ,  H01L21/31122

摘要： A method for stripping an organic mask above a porous low-k dielectric film is provided. A steady state flow of a stripping gas, comprising CO2 and CH4 is provided. The stripping gas is formed into a plasma, wherein the plasma strips at least half the organic mask and protects the porous low-k dielectric film, for a duration of providing the steady state flow of the stripping gas.

摘要翻译： 提供了一种用于剥离多孔低k电介质膜上方的有机掩模的方法。 提供了包括CO 2和CH 4的汽提气体的稳态流。 汽提气体形成等离子体，其中等离子体至少剥离有机掩模的一半，并保护多孔低k电介质膜，持续提供汽提气体的稳态流动。

公开(公告)号：US11594400B2

公开(公告)日：2023-02-28

申请号：US16845723

申请日：2020-04-10

申请人： Lam Research Corporation

发明人： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

IPC分类号： H01J37/32 ,  H01L21/67

摘要： A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

公开(公告)号：US10134600B2

公开(公告)日：2018-11-20

申请号：US15425901

申请日：2017-02-06

申请人： Lam Research Corporation

发明人： Leonid Romm ,  Alan Jensen ,  Xin Zhang ,  Gerardo Delgadino

IPC分类号： H01L21/30 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/66 ,  H01L21/67

摘要： A method for forming a semiconductor device in a plasma processing chamber is provided. An atomic layer etch selectively etches SiO with respect to SiN and deposits a fluorinated polymer. The fluorinated polymer layer is stripped, comprising flowing a stripping gas comprising oxygen into the plasma processing chamber, forming a plasma from the stripping gas, and stopping the flow of the stripping gas. A SiN layer is selectively etched with respect to SiO and SiGe and Si.