公开(公告)号：US20210005425A1

公开(公告)日：2021-01-07

申请号：US16976737

申请日：2019-03-15

申请人： Lam Research Corporation

发明人： Wenbing Yang ,  Tamal Mukherjee ,  Mohand Brouri ,  Samantha Tan ,  Yang Pan ,  Keren Jacobs Kanarik

IPC分类号： H01J37/32

摘要： Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.

公开(公告)号：US20190385850A1

公开(公告)日：2019-12-19

申请号：US16556122

申请日：2019-08-29

申请人： Lam Research Corporation

发明人： Reza Arghavani ,  Samantha Tan ,  Bhadri N. Varadarajan ,  Adrien LaVoie ,  Ananda K. Banerji ,  Jun Qian ,  Shankar Swaminathan

IPC分类号： H01L21/223 ,  H01L21/22 ,  C23C16/52 ,  C23C16/455 ,  H01L21/67 ,  H01L29/66 ,  H01L21/225 ,  C23C16/04 ,  C23C16/50

摘要： Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.

公开(公告)号：US20190108982A1

公开(公告)日：2019-04-11

申请号：US16148939

申请日：2018-10-01

申请人： Lam Research Corporation

发明人： Wenbing Yang ,  Samantha Tan ,  Tamal Mukherjee ,  Keren Jacobs Kanarik ,  Yang Pan

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/3065

摘要： Methods and apparatus for performing high energy atomic layer etching are provided herein. Methods include providing a substrate having a material to be etched, exposing a surface of the material to a modification gas to modify the surface and form a modified surface, and exposing the modified surface to an energetic particle to preferentially remove the modified surface relative to an underlying unmodified surface where the energetic particle has an ion energy sufficient to overcome an average surface binding energy of the underlying unmodified surface. The energy of the energetic particle used is very high; in some cases, the power applied to a bias used when exposing the modified surface to the energetic particle is at least 150 eV.

公开(公告)号：US10103056B2

公开(公告)日：2018-10-16

申请号：US15453098

申请日：2017-03-08

申请人： Lam Research Corporation

发明人： Samantha Tan ,  Boris Volosskiy ,  Taeseung Kim ,  Praveen Nalla ,  Novy Tjokro ,  Artur Kolics

IPC分类号： H01L21/768

摘要： A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.

公开(公告)号：US20180261502A1

公开(公告)日：2018-09-13

申请号：US15453098

申请日：2017-03-08

申请人： Lam Research Corporation

发明人： Samantha Tan ,  Boris Volosskiy ,  Taeseung Kim ,  Praveen Nalla ,  Novy Tjokro ,  Artur KoIics

IPC分类号： H01L21/768

摘要： A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.

公开(公告)号：US09997357B2

公开(公告)日：2018-06-12

申请号：US14194549

申请日：2014-02-28

申请人： Lam Research Corporation

发明人： Reza Arghavani ,  Samantha Tan ,  Bhadri N. Varadarajan ,  Adrien LaVoie ,  Ananda Banerji ,  Jun Qian ,  Shankar Swaminathan

IPC分类号： H01L21/223 ,  H01L21/22 ,  C23C16/52 ,  C23C16/455 ,  H01L21/67 ,  H01L21/225 ,  C23C16/04 ,  H01L29/66 ,  C23C16/50

CPC分类号： H01L21/223 ,  C23C16/045 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/2225 ,  H01L21/2252 ,  H01L21/67155 ,  H01L21/67207 ,  H01L29/66803

摘要： Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.

公开(公告)号：US09972504B2

公开(公告)日：2018-05-15

申请号：US14830683

申请日：2015-08-19

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/768 ,  H01L21/3213 ,  H01L21/285

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US20180033635A1

公开(公告)日：2018-02-01

申请号：US15719484

申请日：2017-09-28

申请人： Lam Research Corporation

发明人： Keren Jacobs Kanarik ,  Jeffrey Marks ,  Harmeet Singh ,  Samantha Tan ,  Alexander Kabansky ,  Wenbing Yang ,  Taeseung Kim ,  Dennis M. Hausmann ,  Thorsten Lill

IPC分类号： H01L21/3065 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L21/683 ,  H01L43/12 ,  H01L21/3213

CPC分类号： H01L21/30655 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/56 ,  H01J37/32009 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/6831 ,  H01L43/12

摘要： Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

公开(公告)号：US20170040214A1

公开(公告)日：2017-02-09

申请号：US14830683

申请日：2015-08-19

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/768 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

摘要翻译： 本文提供了使用将各种沉积技术与蚀刻期间表面改性和去除的交替脉冲集成在一起的去蚀刻 - 脱除工艺将钨沉积成高纵横比特征的方法。

公开(公告)号：US10749103B2

公开(公告)日：2020-08-18

申请号：US16449141

申请日：2019-06-21

申请人： Lam Research Corporation

发明人： Samantha Tan ,  Taeseung Kim ,  Wenbing Yang ,  Jeffrey Marks ,  Thorsten Lill

IPC分类号： H01L41/47 ,  H01L27/22 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32 ,  H01L43/12

摘要： Apparatuses for etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Apparatuses are suitable for fabricating MRAM structures and may be used to integrate ALD and ALE processes without breaking vacuum.