公开(公告)号：US20210305059A1

公开(公告)日：2021-09-30

申请号：US17304174

申请日：2021-06-15

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/3213 ,  H01L21/768

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US11069535B2

公开(公告)日：2021-07-20

申请号：US15929854

申请日：2020-05-26

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/3213 ,  H01L21/768 ,  H01L21/285

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US20180240682A1

公开(公告)日：2018-08-23

申请号：US15954509

申请日：2018-04-16

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/3213 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein. Methods involve introducing an activation gas at a chamber pressure and/or applying a bias using a bias power selected to preferentially etch the metal at or near the opening of the feature relative to the interior region of the feature. Apparatuses include integrated hardware for performing deposition of metal and atomic layer etching of metal in the same tool and/or without breaking vacuum.

公开(公告)号：US20200286743A1

公开(公告)日：2020-09-10

申请号：US15929854

申请日：2020-05-26

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/3213 ,  H01L21/768

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US09972504B2

公开(公告)日：2018-05-15

申请号：US14830683

申请日：2015-08-19

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/768 ,  H01L21/3213 ,  H01L21/285

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US20170040214A1

公开(公告)日：2017-02-09

申请号：US14830683

申请日：2015-08-19

申请人： Lam Research Corporation

发明人： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC分类号： H01L21/768 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

摘要翻译： 本文提供了使用将各种沉积技术与蚀刻期间表面改性和去除的交替脉冲集成在一起的去蚀刻 - 脱除工艺将钨沉积成高纵横比特征的方法。