公开(公告)号：US12302487B2

公开(公告)日：2025-05-13

申请号：US17956192

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Wai-Ming Tam ,  Frank Sinclair

IPC: H05H7/22 ,  H05H7/02 ,  H05H9/04

Abstract: An apparatus may include a drift tube assembly, comprising a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein the plurality of drift tubes further define a plurality of RF quadrupoles, respectively. As such, the plurality of quadrupoles are arranged to defocus the ion beam along a first direction at the plurality of acceleration gaps, respectively, where the first direction extends perpendicularly to the beam propagation direction.

公开(公告)号：US20240274404A1

公开(公告)日：2024-08-15

申请号：US18107819

申请日：2023-02-09

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Tseh-Jen Hsieh ,  Vikram M. Bhosle ,  Bon-Woong Koo ,  Gregory Edward Stratoti

IPC: H01J37/304 ,  C23C14/22 ,  C23C14/54 ,  H01J37/09 ,  H01J37/317

CPC classification number: H01J37/304 ,  C23C14/221 ,  C23C14/54 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0453 ,  H01J2237/24564 ,  H01J2237/327

Abstract: An ion implanter and a method for reducing particle formation in a process chamber are disclosed. The ion implanter includes one or more gas sources in communication with the process chamber to introduce an oxygen-containing gas. After certain criteria has been met, a gas treatment process is initiated. This criteria may be related to the number of workpieces that have been processed or based on the number of particles detected in the process chamber. During the gas treatment process, the oxygen-containing gas is introduced and interacts with depositions disposed on the walls of the process chamber to transform the brittle film into a softer more pliable film that may be less susceptible to breaking. In some embodiments, the oxygen-containing gas may be oxygen gas, ozone or oxygen radicals which are introduced to the process chambers. In some embodiments, water vapor is introduced.

公开(公告)号：US20240266231A1

公开(公告)日：2024-08-08

申请号：US18431909

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  C23C14/54 ,  G01B9/02 ,  G01B11/16 ,  H01L23/00

CPC classification number: H01L22/12 ,  C23C14/547 ,  G01B9/02095 ,  G01B11/162 ,  H01L23/562

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, an OPD profile of the substrate and obtaining a polynomial representation of the OPD profile to determine a plurality of polynomial coefficients characterizing respective elemental deformation shapes of the substrate. The techniques further include identifying one or more cylindric decompositions of a quadratic part of the OPD profile and computing, using a selected cylindric decomposition of the one or more cylindric decompositions, one or more characteristics of a stress-compensation layer (SCL) for the substrate. The techniques further include causing the SCL to be deposited on the substrate and the SCL to be exposed to a stress-mitigation beam.

公开(公告)号：US12002649B2

公开(公告)日：2024-06-04

申请号：US17547623

申请日：2021-12-10

Applicant: Applied Materials, Inc.

Inventor： Robert Mitchell ,  Frank Sinclair ,  Joseph C. Olson ,  William T. Weaver ,  Nick Parisi

IPC: H01J37/20 ,  C23C14/48 ,  C23C14/50 ,  H01J37/317 ,  H01L21/683

CPC classification number: H01J37/20 ,  C23C14/48 ,  C23C14/505 ,  H01J37/3171 ,  H01L21/6833 ,  H01J2237/20214

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

公开(公告)号：US20240114613A1

公开(公告)日：2024-04-04

申请号：US17956192

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Wai-Ming Tam ,  Frank Sinclair

IPC: H05H7/22 ,  H05H7/02 ,  H05H9/04

CPC classification number: H05H7/22 ,  H05H7/02 ,  H05H9/042 ,  H05H2007/025 ,  H05H2007/222

Abstract: An apparatus may include a drift tube assembly, comprising a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein the plurality of drift tubes further define a plurality of RF quadrupoles, respectively. As such, the plurality of quadrupoles are arranged to defocus the ion beam along a first direction at the plurality of acceleration gaps, respectively, where the first direction extends perpendicularly to the beam propagation direction.

公开(公告)号：US11948781B2

公开(公告)日：2024-04-02

申请号：US17160042

申请日：2021-01-27

Applicant: Applied Materials, Inc.

Inventor： Christopher Campbell ,  Costel Biloiu ,  Peter F. Kurunczi ,  Jay R. Wallace ,  Kevin M. Daniels ,  Kevin T. Ryan ,  Minab B. Teferi ,  Frank Sinclair ,  Joseph C. Olson

IPC: H01J37/32

CPC classification number: H01J37/32788 ,  H01J37/32568

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

公开(公告)号：US20230386786A1

公开(公告)日：2023-11-30

申请号：US18303370

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Bon-Woong Koo ,  Tseh-Jen Hsieh ,  Gregory E. Stratoti

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/31703 ,  H01J2237/006 ,  H01J2237/022

Abstract: A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.

公开(公告)号：US20230207247A1

公开(公告)日：2023-06-29

申请号：US17560632

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Klaus Becker ,  Joseph C. Olson ,  Tseh-Jen Hsieh ,  Morgan Patrick Dehnel ,  Anand Mathai George

IPC: H01J27/02 ,  H01J27/18

CPC classification number: H01J27/028 ,  H01J27/18

Abstract: An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

公开(公告)号：US20230138326A1

公开(公告)日：2023-05-04

申请号：US17513241

申请日：2021-10-28

Applicant: Applied Materials, Inc.

Inventor： D. Jeffrey Lischer ,  Bon-Woong Koo ,  Dawei Sun ,  Chi-Yang Cheng ,  Paul Joseph Murphy ,  Frank Sinclair ,  Gregory Edward Stratoti ,  Tseh-Jen Hsieh ,  Wayne Chen ,  Guy Oteri

IPC: H01L21/67 ,  G05D22/02

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

公开(公告)号：US20230124350A1

公开(公告)日：2023-04-20

申请号：US17506185

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  David T. Blahnik ,  Wai-Ming Tam ,  Charles T. Carlson ,  Frank Sinclair

IPC: H05H7/02 ,  H05H9/00 ,  H05H7/12

Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.