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公开(公告)号：US11133213B2
公开(公告)日：2021-09-28
申请号：US16674340
申请日：2019-11-05
Applicant: APPLIED Materials, Inc.
IPC: B32B37/00 , H01L21/687 , H01L21/67 , H01L21/683
Abstract: A deflectable platen including an annular sidewall, a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith, a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith, and a controller coupled to the first and second temperature control elements and configured to operate the first and second temperature control elements to vary temperatures of the first and second layers relative to one another to deflect the platen to more closely match a contour of a wafer.
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公开(公告)号：US20210225682A1
公开(公告)日：2021-07-22
申请号：US16749336
申请日：2020-01-22
Applicant: Applied Materials, Inc.
Inventor： Dawei Sun , Steven M. Anella , Qin Chen , Ron Serisky , Julian G. Blake , David J. Chipman
IPC: H01L21/683 , B23Q3/154
Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.
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公开(公告)号：US20210176824A1
公开(公告)日：2021-06-10
申请号：US16704269
申请日：2019-12-05
Applicant: Applied Materials, Inc.
Inventor： David Morrell , Dawei Sun
Abstract: A solid state heater and methods of manufacturing the heater is disclosed. The heater comprises a unitary component that includes portions that are graphite and other portions that are silicon carbide. Current is conducted through the graphite portion of the unitary structure between two or more terminals. The silicon carbide does not conduct electricity, but is effective at conducting the heat throughout the unitary component. In certain embodiments, chemical vapor conversion (CVC) is used to create the solid state heater. If desired, a coating may be applied to the unitary component to protect it from a harsh environment.
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公开(公告)号：US20230371160A1
公开(公告)日：2023-11-16
申请号：US17740859
申请日：2022-05-10
Applicant: Applied Materials, Inc.
Inventor： David Morrell , Dawei Sun , Qin Chen
IPC: H05F3/06
CPC classification number: H05F3/06
Abstract: A system and method for reducing charge on a workpiece disposed on a platen is disclosed. The system includes an ionizer to generate ionized gas from the source of backside gas. The ionizer may be used to introduce ionized gas into the backside gas channels of the platen. A controller is used to selectively allow backside gas and/or ionized gas into the backside gas channels. In certain embodiments, the platen also includes an exhaust channel in communication with an exhaust valve to ensure that the pressure within the volume between the top surface of the platen and the workpiece is maintained in a desired range. In one embodiment, the system includes a valving system in communication with the source of backside gas and also in communication with the ionizer. In another embodiment, the amount of ionization performed by the ionizer is programmable.
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公开(公告)号：US11545375B2
公开(公告)日：2023-01-03
申请号：US16443043
申请日：2019-06-17
Applicant: Applied Materials, Inc.
Inventor： James D. Strassner , Bradley M. Pomerleau , D. Jeffrey Lischer , Dawei Sun , Michael Paul Rohrer
Abstract: A system and method of heating a workpiece to a desired temperature is disclosed. This system and method consider the physical limitations of the temperature device, such as time lag, temperature offset, and calibration, in creating a hybrid approach that heats the workpiece more efficiently. First, the workpiece is heated using open loop control to heat the workpiece to a threshold temperature. After the threshold temperature is reach, a closed loop maintenance mode is utilized. In certain embodiments, an open loop maintenance mode is employed between the open loop warmup mode and the closed loop maintenance mode. Additionally, a method of calibrating a pyrometer using a contact thermocouple is also disclosed.
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Patent Agency Ranking
公开(公告)号：US11069554B1
公开(公告)日：2021-07-20
申请号：US16749336
申请日：2020-01-22
Applicant: Applied Materials, Inc.
Inventor： Dawei Sun , Steven M. Anella , Qin Chen , Ron Serisky , Julian G. Blake , David J. Chipman
IPC: H01L21/683 , H01T23/00 , B23Q3/154
Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.
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公开(公告)号：US20210134650A1
公开(公告)日：2021-05-06
申请号：US16674340
申请日：2019-11-05
Applicant: APPLIED Materials, Inc.
IPC: H01L21/687 , H01L21/683 , H01L21/67
Abstract: A deflectable platen including an annular sidewall, a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith, a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith, and a controller coupled to the first and second temperature control elements and configured to operate the first and second temperature control elements to vary temperatures of the first and second layers relative to one another to deflect the platen to more closely match a contour of a wafer.
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公开(公告)号：US12278124B2
公开(公告)日：2025-04-15
申请号：US17513241
申请日：2021-10-28
Applicant: Applied Materials, Inc.
Inventor： D. Jeffrey Lischer , Bon-Woong Koo , Dawei Sun , Chi-Yang Cheng , Paul Joseph Murphy , Frank Sinclair , Gregory Edward Stratoti , Tseh-Jen Hsieh , Wayne Chen , Guy Oteri
Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.
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公开(公告)号：US11473978B2
公开(公告)日：2022-10-18
申请号：US16560566
申请日：2019-09-04
Applicant: APPLIED Materials, Inc.
Inventor： Dawei Sun , D. Jeffrey Lischer , Qin Chen , Dale K. Stone , Lyudmila Stone , Steven Anella , Ron Serisky , Chi-Yang Cheng
Abstract: A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.
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公开(公告)号：US20220189784A1
公开(公告)日：2022-06-16
申请号：US17683479
申请日：2022-03-01
Applicant: APPLIED Materials, Inc.
IPC: H01L21/324 , H01L21/20
Abstract: A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE.
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