公开(公告)号：US20240266174A1

公开(公告)日：2024-08-08

申请号：US18431870

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/265 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/265 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, a profile of the out-of-plane deformation of the substrate and identifying, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate. The techniques further include computing, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include causing a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.

公开(公告)号：US20250054757A1

公开(公告)日：2025-02-13

申请号：US18796674

申请日：2024-08-07

Applicant: Applied Materials, Inc.

Inventor： Pradeep Kumar Subrahmanyan ,  Wonjae Lee ,  Ramkumar Karur Shanmugam ,  Olga Kucher ,  Adaeze Osonkie ,  San-Kuei Lin

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/66

Abstract: Disclosed systems and techniques are directed to improvement of semiconductor manufacturing. In one disclosed embodiment, the disclosed systems and techniques include depositing one or more films on a front surface of a substrate, forming a stress compensation layer (SCL) on the one or more deposited films, the SCL causing stress in the substrate to be changed, subjecting the SCL to a stress-mitigation beam to reduce deformation of the substrate, and adding one or more features to at least one of the one or more deposited films.

公开(公告)号：US20240266231A1

公开(公告)日：2024-08-08

申请号：US18431909

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  C23C14/54 ,  G01B9/02 ,  G01B11/16 ,  H01L23/00

CPC classification number: H01L22/12 ,  C23C14/547 ,  G01B9/02095 ,  G01B11/162 ,  H01L23/562

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, an OPD profile of the substrate and obtaining a polynomial representation of the OPD profile to determine a plurality of polynomial coefficients characterizing respective elemental deformation shapes of the substrate. The techniques further include identifying one or more cylindric decompositions of a quadratic part of the OPD profile and computing, using a selected cylindric decomposition of the one or more cylindric decompositions, one or more characteristics of a stress-compensation layer (SCL) for the substrate. The techniques further include causing the SCL to be deposited on the substrate and the SCL to be exposed to a stress-mitigation beam.

公开(公告)号：US20240266233A1

公开(公告)日：2024-08-08

申请号：US18431884

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  C23C14/48 ,  C23C14/54 ,  H01L21/02

CPC classification number: H01L22/20 ,  C23C14/48 ,  C23C14/54 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/0217

Abstract: Disclosed systems and techniques are directed to correcting an out-of-plane (OPD) deformation of a substrate by causing a stress-compensation layer (SCL) to be deposited on the substrate, obtaining, using optical inspection data, a profile of the OPD of the substrate. The techniques further include obtaining a dataset with a representation of an influence function for the substrate, the influence function characterizing a deformation response of the substrate caused by a point-like mechanical influence. The techniques further include performing a regression computation to determine, based at least on the profile of the OPD of the substrate and the influence function, a distribution of a stress-mitigation irradiation of the SCL that mitigate the OPD of the substrate. The techniques further include performing, using the determined distribution of the stress-mitigation irradiation, a stress-mitigation irradiation of the SCL.

公开(公告)号：US20240266230A1

公开(公告)日：2024-08-08

申请号：US18431834

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  G01B11/16 ,  H01L21/3115 ,  H01L21/67

CPC classification number: H01L22/12 ,  G01B11/16 ,  H01L21/31155 ,  H01L21/67288

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate (e.g., wafer) by identifying, using optical inspection data, a profile of the OPD of the substrate and performing a polynomial decomposition of the profile to determine polynomial coefficients characterizing elemental deformation shapes of the substrate. The techniques further include identifying, based on the polynomial coefficients, characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include performing statistical simulations to identify settings for a non-uniform stress-mitigation irradiation of the SCL, by sampling from one or more statistical distributions associated with previously performed stress-mitigation irradiations, and performing the non-uniform stress-mitigation irradiation of the SCL using the identified settings.

公开(公告)号：US20240266186A1

公开(公告)日：2024-08-08

申请号：US18431860

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： San-Kuei Lin ,  Pradeep Kumar Subrahmanyan ,  Wonjae Lee ,  Ramkumar Karur Shanmugam

IPC: H01L21/3115 ,  C23C14/48 ,  C23C14/54 ,  G01B11/16 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/31155 ,  C23C14/48 ,  C23C14/54 ,  G01B11/16 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed systems and techniques are directed to mitigating stresses in substrate-to-substrate bonding processes. Disclosed techniques include obtaining a first substrate supporting transferred feature(s) (TFs) and transferring TFs from the first substrate to a second substrate, transferring TFs from the first substrate to the second substrate, and applying stress mitigation to a target substrate. The target substrate can be the first substrate, an auxiliary substrate supporting TFs prior to transferring TFs from the auxiliary substrate to the first substrate, or the second substrate. Applying stress mitigation to the target substrate includes obtaining an out-of-plane deformation (OPD) profile of the target substrate, causing a stress compensation layer (SCL) to be deposited on the target substrate, and exposing the SCL to a stress-mitigation beam. Settings of the SCL and/or the stress-mitigation beam are determined using the OPD profile of the target substrate.