公开(公告)号：US20250054757A1

公开(公告)日：2025-02-13

申请号：US18796674

申请日：2024-08-07

Applicant: Applied Materials, Inc.

Inventor： Pradeep Kumar Subrahmanyan ,  Wonjae Lee ,  Ramkumar Karur Shanmugam ,  Olga Kucher ,  Adaeze Osonkie ,  San-Kuei Lin

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/66

Abstract: Disclosed systems and techniques are directed to improvement of semiconductor manufacturing. In one disclosed embodiment, the disclosed systems and techniques include depositing one or more films on a front surface of a substrate, forming a stress compensation layer (SCL) on the one or more deposited films, the SCL causing stress in the substrate to be changed, subjecting the SCL to a stress-mitigation beam to reduce deformation of the substrate, and adding one or more features to at least one of the one or more deposited films.

公开(公告)号：US20240266186A1

公开(公告)日：2024-08-08

申请号：US18431860

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： San-Kuei Lin ,  Pradeep Kumar Subrahmanyan ,  Wonjae Lee ,  Ramkumar Karur Shanmugam

IPC: H01L21/3115 ,  C23C14/48 ,  C23C14/54 ,  G01B11/16 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/31155 ,  C23C14/48 ,  C23C14/54 ,  G01B11/16 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed systems and techniques are directed to mitigating stresses in substrate-to-substrate bonding processes. Disclosed techniques include obtaining a first substrate supporting transferred feature(s) (TFs) and transferring TFs from the first substrate to a second substrate, transferring TFs from the first substrate to the second substrate, and applying stress mitigation to a target substrate. The target substrate can be the first substrate, an auxiliary substrate supporting TFs prior to transferring TFs from the auxiliary substrate to the first substrate, or the second substrate. Applying stress mitigation to the target substrate includes obtaining an out-of-plane deformation (OPD) profile of the target substrate, causing a stress compensation layer (SCL) to be deposited on the target substrate, and exposing the SCL to a stress-mitigation beam. Settings of the SCL and/or the stress-mitigation beam are determined using the OPD profile of the target substrate.