公开(公告)号：US10087520B2

公开(公告)日：2018-10-02

申请号：US15627952

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Neil K. Colvin

IPC: C23C16/12 ,  C01B7/13 ,  C01B31/36 ,  C01F7/48 ,  C23C16/448 ,  H01L21/02 ,  H01L21/306 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US10074508B2

公开(公告)日：2018-09-11

申请号：US15350832

申请日：2016-11-14

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Neil Colvin

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/022 ,  H01J2237/038

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

公开(公告)号：US09978599B2

公开(公告)日：2018-05-22

申请号：US15609273

申请日：2017-05-31

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01L21/67 ,  H01L21/677 ,  H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US09870893B2

公开(公告)日：2018-01-16

申请号：US15410707

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: H01J37/04 ,  H01J37/05 ,  H01J37/317 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147

CPC classification number: H01J37/045 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/083

Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.

公开(公告)号：US20170352544A1

公开(公告)日：2017-12-07

申请号：US15609273

申请日：2017-05-31

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01L21/67 ,  C23C14/54 ,  H01J37/317 ,  H01J37/20 ,  H01L21/677 ,  C23C14/48

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US20170287579A1

公开(公告)日：2017-10-05

申请号：US15477680

申请日：2017-04-03

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: G21F1/06 ,  H01J27/08 ,  H01J37/317

CPC classification number: H01J37/32431 ,  G21F1/06 ,  H01J9/32 ,  H01J11/28 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32541 ,  H01J37/32559 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/03 ,  H01J2237/31701

Abstract: An arc chamber has a liner operably coupled to body. The liner has a second surface recessed from a first surface and a hole having a first diameter. The liner has a liner lip extending upwardly from the second surface toward the first surface that surrounds the hole and has a second diameter. An electrode has a shaft and head. The shaft has a third diameter that is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a fourth diameter and a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter that is between the second and fourth diameters. A spacing between the liner lip and electrode lip defines a labyrinth seal and generally prevents contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

公开(公告)号：US20170207057A1

公开(公告)日：2017-07-20

申请号：US15410707

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/083

Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.

公开(公告)号：US20170207054A1

公开(公告)日：2017-07-20

申请号：US15410711

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul b. Silverstein

IPC: H01J17/06 ,  H01J27/08 ,  H01J17/18

CPC classification number: H01J17/06 ,  H01J17/186 ,  H01J27/022 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/061

Abstract: An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess. A gap is defined between the U-shaped lip and the liner, wherein the U-shaped lip reduces a conductance of gas into the gap and the recess further reduces conductance of gas into the region.

公开(公告)号：US09711329B2

公开(公告)日：2017-07-18

申请号：US14979663

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Andy M. Ray

IPC: G21K5/04 ,  H01J37/304 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535

Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

公开(公告)号：US20160189917A1

公开(公告)日：2016-06-30

申请号：US14979653

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: H01J37/147 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1478 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract translation: 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。