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    CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM
    11.
    发明申请
    CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM 有权
    用于离子植入系统使用的高压电源的电流限制

    公开(公告)号：US20130020940A1

    公开(公告)日：2013-01-24

    申请号：US13187905

    申请日：2011-07-21

    Applicant: Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    Inventor： Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    IPC: H01J7/44

    CPC classification number: H01J37/241 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/0206 ,  H02H9/02

    Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

    Abstract translation: 公开了一种用于离子源组件的浪涌保护系统。 该系统包括与热离子二极管和离子源组件串联耦合的高压电源。 高压电源封装在压力罐中并驱动离子源组件。 热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

    CHARGED PARTICLE ACCELERATOR
    12.
    发明申请
    CHARGED PARTICLE ACCELERATOR 有权
    充电颗粒加速器

    公开(公告)号：US20090224701A1

    公开(公告)日：2009-09-10

    申请号：US12388135

    申请日：2009-02-18

    Applicant: Hiroshi MORITA ,  Ryozo Takeuchi ,  Toshiyuki Yokosuka

    Inventor： Hiroshi MORITA ,  Ryozo Takeuchi ,  Toshiyuki Yokosuka

    IPC: H05H5/00

    CPC classification number: H05H7/00 ,  H01J37/026 ,  H01J37/04 ,  H01J2237/004 ,  H01J2237/0203 ,  H01J2237/04735

    Abstract: In a charged particle accelerator, voltage of several tens of kV is applied between accelerating electrodes. In such a case, electric discharge is sometimes generated between the accelerating electrodes. In the charged particle accelerator, part or entirety of the accelerating electrodes is coated with an electric discharge suppressing layer made of ceramics or alloy having a high melting point as compared with metal. When impurity fine particles are accelerated by an electric field and collide with the electrodes, the electric discharge suppressing layer made of ceramics or alloy prevents metal vapor from being easily generated from the electrodes and an ionized plasma from being easily produced, thus suppressing electric discharge between the electrodes.

    Abstract translation: 在带电粒子加速器中，在加速电极之间施加几十kV的电压。 在这种情况下，有时会在加速电极之间产生放电。 在带电粒子加速器中，加速电极的一部分或全部涂覆有与金属相比具有高熔点的陶瓷或合金制成的放电抑制层。 当杂质微粒被电场加速并与电极碰撞时，由陶瓷或合金制成的放电抑制层防止容易从电极产生金属蒸气，并且容易地产生电离等离子体，从而抑制 电极。

    Radio frequency excitation arrangement including a limiting circuit
    13.
    发明授权
    Radio frequency excitation arrangement including a limiting circuit 失效
    射频激励装置包括限制电路

    公开(公告)号：US07509105B2

    公开(公告)日：2009-03-24

    申请号：US11330897

    申请日：2006-01-11

    Applicant: Joachim Ziegler

    Inventor： Joachim Ziegler

    IPC: H04B7/00

    CPC classification number: H03F1/52 ,  H01J37/32174 ,  H01J2237/0203 ,  H03F3/189 ,  H03F2200/435 ,  H03F2200/444 ,  H03F2200/451 ,  H03F2200/78

    Abstract: Disclosed is a method for limiting the voltage applied to a component in a radio frequency path (RF path) of a radio frequency excitation system. According to the method, a radio frequency signal (RF signal) is tapped at a first random point of the RF path, and energy is withdrawn from the RF path when the RF signal tapped at the first point or a value proportional to the tapped RF signal exceeds a reference value, resulting in the component being protected against excess voltages due to disturbances.

    Abstract translation: 公开了一种用于限制施加到射频激励系统的射频路径（RF路径）中的分量的电压的方法。 根据该方法，射频信号（RF信号）在RF路径的第一随机点被抽头，并且当RF信号在第一点被抽头或与抽头RF成比例的值时，从RF路径中取出能量 信号超过参考值，导致组件被防止由于干扰而导致的过电压。

    Electron beam control device
    14.
    发明申请
    Electron beam control device 有权
    电子束控制装置

    公开(公告)号：US20030234367A1

    公开(公告)日：2003-12-25

    申请号：US10366746

    申请日：2003-02-14

    Inventor： Shiaki Murai ,  Kazuaki Yamamoto

    IPC: H01J037/244

    CPC classification number: H01J37/265 ,  H01J2237/0203 ,  H01J2237/248

    Abstract: There is provided an electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a track of an electron beam is not adversely influenced by the amount of magnetic variation occurring from surrounding influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.

    Abstract translation: 提供了一种电子束控制装置，其控制使用的电子束，例如电子显微镜，电子束曝光装置等，其中电子束的轨迹不受来自周围的磁性变化量的不利影响 影响。 控制电子束的电子束控制装置，例如电子显微镜，电子束曝光装置等，其中用于测量影响电子束轨迹的磁性变化量的磁力计传感器 影响，提供。

    Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system
    15.
    发明申请
    Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system 有权
    用于降低等离子体处理系统的夹紧环中的电弧相关损伤的技术

    公开(公告)号：US20030198753A1

    公开(公告)日：2003-10-23

    申请号：US10418259

    申请日：2003-04-16

    Applicant: Lam Research Corporation

    Inventor： Jose Tong ,  Eric H. Lenz

    IPC: H05H001/24 ,  C23F001/00 ,  H01L021/306 ,  C23C016/00

    CPC classification number: H01L21/68721 ,  H01J37/32082 ,  H01J2237/0203 ,  H01L21/67069 ,  H01L21/68785

    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.

    Abstract translation: 公开了一种构造成耦合到等离子体处理室的室结构的夹紧环。 夹紧环具有用于容纳多个紧固件的多个孔。 夹紧环包括围绕夹紧环的外周设置的多个凸缘，多个凸缘的相邻凸缘被设置成使得设置在相邻凸缘之间的多个孔的孔距离相邻的凸缘大致等距离 法兰。 多个凸缘构造成与室结构配合。 夹紧环和凸缘的尺寸使得当多个凸缘与室结构配合时，相邻的凸缘之间的凹槽在夹紧环和室结构之间形成间隙。

    Apparatus and method for treating substrate
    17.
    发明授权
    Apparatus and method for treating substrate 有权

    公开(公告)号：US11676804B2

    公开(公告)日：2023-06-13

    申请号：US16916740

    申请日：2020-06-30

    Applicant: SEMES CO., LTD.

    Inventor： Daehyun Kim

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32724 ,  H01J37/32183 ,  H01J2237/0203 ,  H01J2237/334 ,  H01L21/67069

    Abstract: A substrate treating apparatus includes a chamber having a treatment space therein, a substrate support unit that supports a substrate in the treatment space, a gas supply unit that supplies a gas into the treatment space, and a plasma generation unit including an RF power supply that applies RF power, wherein the plasma generation unit generates plasma from the gas using the RF power. The substrate support unit includes a support plate that supports the substrate and a heating unit that controls temperature of the substrate. The heating unit includes a heating member, a heater power supply that applies power to the heating member, and a filter unit that prevents coupling of the heating member and the RF power supply. The filter unit includes a filter that interrupts the RF power supplied from the RF power supply and a filter control unit that prevents degradation in performance of the filter.

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