公开(公告)号：US20200006469A1

公开(公告)日：2020-01-02

申请号：US16410259

申请日：2019-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Yuan Shih ,  Kai-Fung Chang ,  Shih-Fen Huang ,  Wen-Chuan Tai ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Anderson Lin ,  Fu-Chun Huang ,  Chun-Ren Cheng ,  Ivan Hua-Shu Wu ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01L49/02 ,  H01L23/58

Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.

公开(公告)号：US09862592B2

公开(公告)日：2018-01-09

申请号：US14657429

申请日：2015-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Ren Cheng ,  Richard Yen ,  Yi-Hsien Chang ,  Wei-Cheng Shen

IPC: H01L29/84 ,  B81B3/00 ,  B81C3/00

CPC classification number: B81B3/0021 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C3/001 ,  H04R1/06 ,  H04R17/00 ,  H04R17/02 ,  H04R2201/003

Abstract: A MEMS transducer includes a first substrate and a second substrate facing the first substrate. The first substrate includes a piezoelectric diaphragm and a conductive contact structure. The conductive contact structure is electrically connected to the piezoelectric diaphragm, and protrudes beyond a principal surface of the first substrate. The second substrate includes a conductive receiving feature and an active device. The conductive receiving feature is aligned with and further bonded to the conductive contact structure. The active device is electrically connected to the piezoelectric diaphragm through the conductive receiving feature and the conductive contact structure.

公开(公告)号：US20170322177A1

公开(公告)日：2017-11-09

申请号：US15661798

申请日：2017-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L21/84 ,  H01L51/00 ,  H01L27/12

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US11486854B2

公开(公告)日：2022-11-01

申请号：US16727738

申请日：2019-12-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L27/12 ,  H01L29/78 ,  H01L51/00 ,  H01L21/84 ,  H01L29/66 ,  C12Q1/00

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US10829364B2

公开(公告)日：2020-11-10

申请号：US15861469

申请日：2018-01-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Ren Cheng ,  Richard Yen ,  Yi-Hsien Chang ,  Wei-Cheng Shen

IPC: H01L29/84 ,  B81B3/00 ,  B81C3/00 ,  H04R1/06 ,  H04R17/00 ,  H04R17/02

Abstract: A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.

公开(公告)号：US20200098517A1

公开(公告)日：2020-03-26

申请号：US16417797

申请日：2019-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Anderson Lin ,  Chun-Ren Cheng ,  Chi-Yuan Shih ,  Shih-Fen Huang ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Fu-Chun Huang ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01G4/012 ,  H01G4/228 ,  H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01G4/12

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.

公开(公告)号：US10522400B2

公开(公告)日：2019-12-31

申请号：US15216853

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Ching-Hui Lin

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786 ,  G01N27/414 ,  H01L23/34 ,  H01L27/12

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

公开(公告)号：US10273140B2

公开(公告)日：2019-04-30

申请号：US14599218

申请日：2015-01-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsien Chang ,  Tzu-Heng Wu ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Jung-Kuo Tu

IPC: B81B3/00 ,  H01L23/10

Abstract: A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.

公开(公告)号：US10101295B2

公开(公告)日：2018-10-16

申请号：US15386545

申请日：2016-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Ching-Hui Lin

IPC: G01N27/403 ,  G01N27/414 ,  H01L23/482 ,  H01L29/786

Abstract: A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.

公开(公告)号：US09968927B2

公开(公告)日：2018-05-15

申请号：US14719991

申请日：2015-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Emerson Cheng ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Alex Kalnitsky ,  Allen Timothy Chang

IPC: H01L27/12 ,  G01N27/414 ,  G01N21/64 ,  B01L3/00

CPC classification number: B01L3/50 ,  B01L3/502715 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2300/168 ,  B01L2300/1827 ,  B01L2400/0424 ,  G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N27/414 ,  G01N2021/6482 ,  H01L27/1203 ,  H01L27/1211

Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.