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公开(公告)号：US11807521B2
公开(公告)日：2023-11-07
申请号：US17218358
申请日：2021-03-31
发明人： Chun-Wen Cheng , Chia-Hua Chu , Wen Cheng Kuo
CPC分类号： B81C1/00158 , B81B3/0021 , B81B7/0029 , B81C1/0023 , B81C1/00325 , B81C1/00357 , B81C1/00476 , B81C1/00539 , B81C1/00825 , B81C3/001 , B81B7/0006 , B81B7/0061 , B81B2201/0257 , B81B2203/0127 , B81B2207/012 , B81B2207/115 , H01L23/053 , H01L24/48 , H01L2224/48195
摘要： Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.
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公开(公告)号：US20220289556A1
公开(公告)日：2022-09-15
申请号：US17352870
申请日：2021-06-21
发明人： Chun-Wen Cheng , Chia-Hua Chu , Chun Yin Tsai , Wen Cheng Kuo
摘要： Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.
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公开(公告)号：US11051109B2
公开(公告)日：2021-06-29
申请号：US16506037
申请日：2019-07-09
发明人： Chun-Wen Cheng , Chia-Hua Chu , Wen-Tuan Lo
摘要： A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
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公开(公告)号：US20210188627A1
公开(公告)日：2021-06-24
申请号：US17192989
申请日：2021-03-05
发明人： Chia-Hua Chu , Chun-Wen Cheng , Wen Cheng Kuo
摘要： Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
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公开(公告)号：US10850976B2
公开(公告)日：2020-12-01
申请号：US16515325
申请日：2019-07-18
发明人： Kuei-Sung Chang , Chia-Hua Chu , Shang-Ying Tsai
摘要： Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.
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公开(公告)号：US20200095119A1
公开(公告)日：2020-03-26
申请号：US16515325
申请日：2019-07-18
发明人： Kuei-Sung Chang , Chia-Hua Chu , Shang-Ying Tsai
摘要： Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.
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公开(公告)号：US20190135610A1
公开(公告)日：2019-05-09
申请号：US15873937
申请日：2018-01-18
发明人： Yi-Chuan Teng , Chun-Yin Tsai , Chia-Hua Chu , Chun-Wen Cheng
摘要： Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.
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公开(公告)号：US10131541B2
公开(公告)日：2018-11-20
申请号：US15215753
申请日：2016-07-21
发明人： Chia-Hua Chu
摘要： The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.
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公开(公告)号：US20180022603A1
公开(公告)日：2018-01-25
申请号：US15215753
申请日：2016-07-21
发明人： Chia-Hua Chu
IPC分类号： B81C1/00
CPC分类号： B81C1/00825 , B81B2201/0257
摘要： The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.
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公开(公告)号：US09796582B1
公开(公告)日：2017-10-24
申请号：US15363571
申请日：2016-11-29
发明人： Chun-Wen Cheng , Chia-Hua Chu
IPC分类号： H01L21/82 , B81C1/00 , B81B7/00 , H01L23/532
CPC分类号： B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/82 , H01L23/53295 , H01L2924/1461
摘要： A method for integrating complementary metal-oxide-semiconductor (CMOS) devices with a microelectromechanical systems (MEMS) device using a flat surface above a sacrificial layer is provided. In some embodiments, a back-end-of-line (BEOL) interconnect structure is formed covering a semiconductor substrate, where the BEOL interconnect structure comprises a first dielectric region. A sacrificial layer is formed over the first dielectric region, and a second dielectric region is formed covering the sacrificial layer and the first dielectric region. A planarization is performed into an upper surface of the second dielectric region to planarize the upper surface. A MEMS structure is formed on the planar upper surface of the second dielectric region. A cavity etch is performed into the sacrificial layer, through the MEMS structure, to remove the sacrificial layer and to form a cavity in place of the sacrificial layer. An integrated circuit (IC) resulting from the method is also provided.
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