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公开(公告)号：US12134555B2
公开(公告)日：2024-11-05
申请号：US18315799
申请日：2023-05-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Chia Liu , Chia-Hua Chu , Chun-Wen Cheng
Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
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公开(公告)号：US11807521B2
公开(公告)日：2023-11-07
申请号：US17218358
申请日：2021-03-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Wen Cheng Kuo
CPC classification number: B81C1/00158 , B81B3/0021 , B81B7/0029 , B81C1/0023 , B81C1/00325 , B81C1/00357 , B81C1/00476 , B81C1/00539 , B81C1/00825 , B81C3/001 , B81B7/0006 , B81B7/0061 , B81B2201/0257 , B81B2203/0127 , B81B2207/012 , B81B2207/115 , H01L23/053 , H01L24/48 , H01L2224/48195
Abstract: Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.
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公开(公告)号：US20220289556A1
公开(公告)日：2022-09-15
申请号：US17352870
申请日：2021-06-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Chun Yin Tsai , Wen Cheng Kuo
Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.
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公开(公告)号：US11117796B2
公开(公告)日：2021-09-14
申请号：US16923869
申请日：2020-07-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Jung-Huei Peng , Shang-Ying Tsai , Hung-Chia Tsai , Yi-Chuan Teng
Abstract: An embodiment is a MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
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公开(公告)号：US11051109B2
公开(公告)日：2021-06-29
申请号：US16506037
申请日：2019-07-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Wen-Tuan Lo
Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
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Patent Agency Ranking
公开(公告)号：US20210188627A1
公开(公告)日：2021-06-24
申请号：US17192989
申请日：2021-03-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hua Chu , Chun-Wen Cheng , Wen Cheng Kuo
Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
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公开(公告)号：US20200072789A1
公开(公告)日：2020-03-05
申请号：US16679015
申请日：2019-11-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Shao LIU , Chun-Ren Cheng , Ching-Ray Chen , Yi-Hsien Chang , Fei-Lung Lai , Chun-Wen Cheng
IPC: G01N27/414 , H01L21/311 , H01L27/088 , H01L29/66
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
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公开(公告)号：US20190135610A1
公开(公告)日：2019-05-09
申请号：US15873937
申请日：2018-01-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chuan Teng , Chun-Yin Tsai , Chia-Hua Chu , Chun-Wen Cheng
Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.
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公开(公告)号：US09796582B1
公开(公告)日：2017-10-24
申请号：US15363571
申请日：2016-11-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen Cheng , Chia-Hua Chu
IPC: H01L21/82 , B81C1/00 , B81B7/00 , H01L23/532
CPC classification number: B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/82 , H01L23/53295 , H01L2924/1461
Abstract: A method for integrating complementary metal-oxide-semiconductor (CMOS) devices with a microelectromechanical systems (MEMS) device using a flat surface above a sacrificial layer is provided. In some embodiments, a back-end-of-line (BEOL) interconnect structure is formed covering a semiconductor substrate, where the BEOL interconnect structure comprises a first dielectric region. A sacrificial layer is formed over the first dielectric region, and a second dielectric region is formed covering the sacrificial layer and the first dielectric region. A planarization is performed into an upper surface of the second dielectric region to planarize the upper surface. A MEMS structure is formed on the planar upper surface of the second dielectric region. A cavity etch is performed into the sacrificial layer, through the MEMS structure, to remove the sacrificial layer and to form a cavity in place of the sacrificial layer. An integrated circuit (IC) resulting from the method is also provided.
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公开(公告)号：US09493346B2
公开(公告)日：2016-11-15
申请号：US14445226
申请日：2014-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wei-Cheng Shen , Yi-Hsien Chang , Yi Heng Tsai , Tzu-Heng Wu , Chun-Ren Cheng , Chun-Wen Cheng
CPC classification number: B81C1/00238
Abstract: An integrated circuit (IC) structure is provided. The IC structure includes an IC substrate including active devices which are coupled together through a conductive interconnect structure arranged thereover. The conductive interconnect structure includes a series of horizontal conductive layers and dielectric regions arranged between neighboring horizontal conductive layers. The conductive interconnect structure includes an uppermost conductive horizontal region with a planar top surface region. A MEMS substrate is arranged over the IC substrate and includes a flexible or moveable structure that flexes or moves commensurate with a force applied to the flexible or moveable structure. The active devices of the IC substrate are arranged to establish analysis circuitry to facilitate electrical measurement of a capacitance between the uppermost conductive horizontal region and the flexible or moveable structure.
Abstract translation: 提供集成电路（IC）结构。 IC结构包括IC基板，其包括通过布置在其上的导电互连结构耦合在一起的有源器件。 导电互连结构包括布置在相邻的水平导电层之间的一系列水平导电层和电介质区域。 导电互连结构包括具有平坦顶表面区域的最上面的导电水平区域。 MEMS基板布置在IC基板上方，并且包括柔性或可移动的结构，其以施加到柔性或可移动结构的力相应地弯曲或移动。 IC基板的有源器件被布置成建立分析电路，以便于电测量最上面的导电水平区域和柔性或可移动结构之间的电容。
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