公开(公告)号：US20200072789A1

公开(公告)日：2020-03-05

申请号：US16679015

申请日：2019-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao LIU ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L21/311 ,  H01L27/088 ,  H01L29/66

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US20170316969A1

公开(公告)日：2017-11-02

申请号：US15219523

申请日：2016-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuei-Sung Chang ,  Ching-Ray Chen ,  Yen-Cheng Liu ,  Shang-Ying Tsai

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/306 ,  H01L23/00

CPC classification number: H01L21/76256 ,  H01L24/94 ,  H01L2224/94

Abstract: A semiconductor device includes a first wafer and a second wafer. The first wafer has a top portion. The second wafer is disposed on the top portion of the first wafer, wherein the second wafer has a bottom portion bonded on the top portion of the first wafer, and a non-bonded area of the bottom portion has a width smaller than 0.5 mm. The bottom portion of the second wafer has a size smaller than or equal to that of the top portion of the first wafer. In some embodiments, the top portion of the first wafer has first rounded corners, and the bottom portion of the second wafer has second corners. A cross-sectional view of each of the second rounded corners has a radius smaller than that of each of first rounded corners. In some embodiments, the bottom portion of the second wafer has right angle corners.

公开(公告)号：US09968927B2

公开(公告)日：2018-05-15

申请号：US14719991

申请日：2015-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Emerson Cheng ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Alex Kalnitsky ,  Allen Timothy Chang

IPC: H01L27/12 ,  G01N27/414 ,  G01N21/64 ,  B01L3/00

CPC classification number: B01L3/50 ,  B01L3/502715 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2300/168 ,  B01L2300/1827 ,  B01L2400/0424 ,  G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N27/414 ,  G01N2021/6482 ,  H01L27/1203 ,  H01L27/1211

Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.

公开(公告)号：US11099152B2

公开(公告)日：2021-08-24

申请号：US16679015

申请日：2019-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: H01L27/088 ,  G01N27/414 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US20160341656A1

公开(公告)日：2016-11-24

申请号：US14719991

申请日：2015-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Emerson Cheng ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Alex Kalnitsky ,  Allen Timothy Chang

IPC: G01N21/03 ,  H01L27/146 ,  G01N21/64

CPC classification number: B01L3/50 ,  B01L3/502715 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2300/168 ,  B01L2300/1827 ,  B01L2400/0424 ,  G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N27/414 ,  G01N2021/6482 ,  H01L27/1203 ,  H01L27/1211

Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.

Abstract translation: 本公开涉及具有集成光学生物传感器的集成芯片以及相关联的制造方法。 在一些实施例中，集成光学生物传感器具有布置在半导体衬底内的感测装置。 光学波导结构位于半导体衬底的位于传感器件上方的位置的第一侧上。 在将光波导结构与被配置为接收样品溶液的样品保留区域分离的位置处设置在光波导结构上的电介质结构。

公开(公告)号：US10473616B2

公开(公告)日：2019-11-12

申请号：US15649963

申请日：2017-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.