公开(公告)号：US11860121B2

公开(公告)日：2024-01-02

申请号：US17884382

申请日：2022-08-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/56966 ,  H01L21/76251

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

公开(公告)号：US10139364B2

公开(公告)日：2018-11-27

申请号：US15492548

申请日：2017-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: H01L27/14 ,  G01N27/414 ,  H01L23/34 ,  H01L27/085 ,  H01L27/16 ,  H01L27/02

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

公开(公告)号：US20170363704A1

公开(公告)日：2017-12-21

申请号：US15691296

申请日：2017-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hua WEN ,  Jui-Cheng Huang ,  Yi-Shao Liu ,  Chun-Wen Cheng ,  Tung-Tsun Chen

IPC: G01R35/00 ,  G01N27/414

CPC classification number: G01R35/00 ,  G01N27/4145

Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.

公开(公告)号：US20160334362A1

公开(公告)日：2016-11-17

申请号：US14713543

申请日：2015-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: G01N27/414 ,  H01L27/02 ,  H01L27/085 ,  H01L23/34 ,  H01L23/522

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L23/345 ,  H01L27/0211 ,  H01L27/085 ,  H01L27/16

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Abstract translation: 集成电路器件的器件层包括跨越多个器件区域的半导体有源层。 每个器件区域在器件层中具有加热元件，温度传感器和bioFET。 生物FET在半导体有源层中具有源极/漏极区域和沟道区域，并且暴露在表面上的流体栅极用于在器件层的一侧上进行流体接口。 多层金属互连结构设置在器件层的相对侧上。 该结构将加热元件放置在靠近流体浇口处，从而能够进行局部加热，精确加热和多路复用生物传感应用的多路温度控制。

公开(公告)号：US12222317B2

公开(公告)日：2025-02-11

申请号：US18525583

申请日：2023-11-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

公开(公告)号：US11808731B2

公开(公告)日：2023-11-07

申请号：US17135498

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng Huang ,  Yi-Hsien Chang ,  Chin-Hua Wen ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Ching-Hui Lin ,  Sean Cheng ,  Hector Chang

IPC: G01N27/414 ,  B01L3/00 ,  B01F31/85 ,  B01F33/30 ,  H10N30/00 ,  H10N30/20 ,  G01N33/543 ,  C12Q1/6825

CPC classification number: G01N27/4145 ,  B01F31/85 ,  B01F33/30 ,  B01F33/3045 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/502761 ,  B01L3/502792 ,  G01N33/5438 ,  H10N30/1051 ,  H10N30/2042 ,  H10N30/2047 ,  B01L2200/12 ,  B01L2300/06 ,  B01L2300/0645 ,  B01L2300/0663 ,  B01L2300/0819 ,  B01L2300/0887 ,  B01L2300/1827 ,  C12Q1/6825

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US20170343498A1

公开(公告)日：2017-11-30

申请号：US15216853

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Ching-Hui Lin

IPC: G01N27/04 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

公开(公告)号：US20230384259A1

公开(公告)日：2023-11-30

申请号：US18232719

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Tsun Chen ,  Jui-Cheng HUANG ,  Kun-Lung CHEN ,  Cheng-Hsiang HSIEH

IPC: G01N27/414 ,  H01L27/12

CPC classification number: G01N27/4145 ,  H01L27/1203 ,  H05B2203/013

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US11828722B2

公开(公告)日：2023-11-28

申请号：US16716196

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chuan Liao ,  Chien-Kuo Yang ,  Yi-Shao Liu ,  Tung-Tsun Chen ,  Chan-Ching Lin ,  Jui-Cheng Huang ,  Felix Ying-Kit Tsui ,  Jing-Hwang Yang

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

公开(公告)号：US20200173958A1

公开(公告)日：2020-06-04

申请号：US16413865

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Katherine H. Chiang ,  Jui-Cheng Huang ,  Ke-Wei Su ,  Tung-Tsun Chen ,  Wei Lee ,  Pei-Wen Liu

IPC: G01N27/414 ,  G01N27/02 ,  G01N33/543

Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.