公开(公告)号：US11860121B2

公开(公告)日：2024-01-02

申请号：US17884382

申请日：2022-08-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/56966 ,  H01L21/76251

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

公开(公告)号：US11614422B2

公开(公告)日：2023-03-28

申请号：US17135508

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Jie Huang ,  Jui-Cheng Huang ,  Cheng-Hsiang Hsieh

IPC: G01N27/414

Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

公开(公告)号：US11860120B2

公开(公告)日：2024-01-02

申请号：US17007973

申请日：2020-08-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/56966 ,  H01L21/76251

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

公开(公告)号：US11320395B2

公开(公告)日：2022-05-03

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234 ,  H01L23/29

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US20220091646A1

公开(公告)日：2022-03-24

申请号：US17543542

申请日：2021-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsing Hsiao ,  Yu-Jie Huang ,  Tsung-Tsun Chen ,  Allen Timothy Chang

IPC: G06F1/20 ,  G06F1/04

Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.

公开(公告)号：US20210389273A1

公开(公告)日：2021-12-16

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/29 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US10161901B2

公开(公告)日：2018-12-25

申请号：US14961588

申请日：2015-12-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Jie Huang ,  Jui-Cheng Huang ,  Cheng-Hsiang Hsieh

IPC: G01N27/414

Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

公开(公告)号：US11209878B2

公开(公告)日：2021-12-28

申请号：US16441637

申请日：2019-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng Huang ,  Yi-Hsing Hsiao ,  Yu-Jie Huang ,  Tsung-Tsun Chen ,  Allen Timothy Chang

IPC: G06F1/04 ,  G06F1/12 ,  G06F5/06 ,  G06F1/20

Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.

公开(公告)号：US11119101B2

公开(公告)日：2021-09-14

申请号：US15406066

申请日：2017-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng Huang ,  Chin-Hua Wen ,  Tung-Tsun Chen ,  Cheng-Hsiang Hsieh ,  Yu-Jie Huang ,  Ching-Hui Lin

IPC: G01N33/543 ,  G01N27/416 ,  G01N27/414 ,  B01L3/00 ,  C12Q1/6837

Abstract: A fluidic cartridge and methods of operation are described. The fluidic cartridge includes a substrate having a plurality of contact pads designed to electrically couple with an analyzer, a semiconductor chip having a sensor array, and a reference electrode. The fluidic cartridge includes a first fluidic channel having an inlet and coupled to a second fluidic channel, the second fluidic channel being aligned such that the sensor array and the reference electrode are disposed within the second fluidic channel. A first plug is disposed at the first inlet. The first plug includes a compliant material configured to be punctured by a capillary without leaking fluid through the first plug.

公开(公告)号：US12222317B2

公开(公告)日：2025-02-11

申请号：US18525583

申请日：2023-11-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.