Invention Grant
- Patent Title: Substrate structure, semiconductor structure and method for fabricating the same
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Application No.: US14599218Application Date: 2015-01-16
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Publication No.: US10273140B2Publication Date: 2019-04-30
- Inventor: Yi-Hsien Chang , Tzu-Heng Wu , Chun-Ren Cheng , Shih-Wei Lin , Jung-Kuo Tu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: B81B3/00
- IPC: B81B3/00 ; H01L23/10

Abstract:
A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.
Public/Granted literature
- US20160207756A1 SUBSTRATE STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-07-21
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