SEMICONDUCTOR DEVICE
    12.
    发明申请

    公开(公告)号:US20210118781A1

    公开(公告)日:2021-04-22

    申请号:US17060545

    申请日:2020-10-01

    Abstract: A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them. A back surface electrode for drain of the semiconductor chip and the die pad are bonded via the first bonding material, the metal plate and the pad for source of the semiconductor chip are bonded via a second bonding material, and the metal plate and the lead coupling portion are bonded via a third bonding material. The first, second, and third bonding materials have conductivity, and an elastic modulus of each of the first and second bonding materials is lower than that of the third bonding material.

    SEMICONDUCTOR DEVICE
    15.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20170033035A1

    公开(公告)日:2017-02-02

    申请号:US15174568

    申请日:2016-06-06

    Abstract: To improve the reliability of a semiconductor device. A chip mounting portion TAB5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP1 (LV) and a pad of a semiconductor chip CHP3 are electrically coupled by a wire W1a and a wire W1b through a relay lead RL1. Likewise, a gate electrode pad of a semiconductor chip CHP1 (LW) and the pad of the semiconductor chip CHP3 are electrically coupled by a wire W1c and a wire W1d through a relay lead RL2. At this time, the structures of parts of the relay leads RL1 and RL2, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD1 and LD2 which function as external terminals.

    Abstract translation: 提高半导体器件的可靠性。 芯片安装部TAB5布置成向+ x方向侧移动。 此外,半导体芯片CHP1(LV)的栅电极焊盘和半导体芯片CHP3的焊盘通过导线W1a和导线W1b通过继电器引线RL1电耦合。 同样地,半导体芯片CHP1(LW)的栅电极焊盘和半导体芯片CHP3的焊盘通过引线W1c和引线W1d通过继电器引线RL2电耦合。 此时,从密封体MR露出的继电器引线RL1,RL2的部分的结构与作为密封体MR的多个引线LD1,LD2的密封体MR露出的各部分的结构不同 外部端子。

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