公开(公告)号：US20180277518A1

公开(公告)日：2018-09-27

申请号：US15861231

申请日：2018-01-03

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tetsuya IIDA ,  Yasutaka NAKASHIBA ,  Nobuya KOIKE

IPC: H01L25/065 ,  H01L23/528 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L23/31 ,  H01L23/544 ,  H01L25/00 ,  H01L21/78 ,  H01L21/56 ,  H01L21/02 ,  H01L23/495

CPC classification number: H01L25/0657 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/544 ,  H01L24/05 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83139 ,  H01L2224/8385 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06531 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An improvement is achieved in the reliability of a semiconductor device. A first semiconductor chip includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate, an insulating film formed over the wiring structure, and a first insulating film formed over the insulating film. A second semiconductor chip includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate, an insulating film formed over the wiring structure, and a second insulating film formed over the insulating film. The first insulating film forms an uppermost layer of the first semiconductor chip. The second insulating film forms an uppermost layer of the second semiconductor chip. Each of the first and second insulating films is made of a photosensitive resin film having an adhesive property. The first and second semiconductor chips are stacked such that the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip are in contact with each other.

公开(公告)号：US20130043576A1

公开(公告)日：2013-02-21

申请号：US13655446

申请日：2012-10-19

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki NAKAMURA ,  Atsushi FUJIKI ,  Tatsuhiro SEKI ,  Nobuya KOIKE ,  Yukihiro SATO ,  Kisho ASHIDA

IPC: H01L23/495

CPC classification number: H01L27/07 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L29/66 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

Abstract translation: 提高半导体器件的性能和可靠性。 对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。

公开(公告)号：US20180306844A1

公开(公告)日：2018-10-25

申请号：US16019050

申请日：2018-06-26

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keita TAKADA ,  Nobuya KOIKE ,  Akihiro NAKAHARA ,  Makoto TANAKA

IPC: G01R17/16 ,  H01L29/78 ,  H01L23/535 ,  H01L27/02 ,  G01R19/00 ,  H01L29/08 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8234

CPC classification number: G01R17/16 ,  G01R19/0092 ,  H01L21/823487 ,  H01L23/535 ,  H01L27/0207 ,  H01L27/0251 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/41741 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7815 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

公开(公告)号：US20170089957A1

公开(公告)日：2017-03-30

申请号：US15271537

申请日：2016-09-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keita TAKADA ,  Nobuya KOIKE ,  Akihiro NAKAHARA ,  Makoto TANAKA

IPC: G01R17/16 ,  G01R19/00 ,  H01L29/08 ,  H01L27/088 ,  H01L23/535

CPC classification number: G01R17/16 ,  G01R19/0092 ,  H01L21/823487 ,  H01L23/535 ,  H01L27/0207 ,  H01L27/0251 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/41741 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7815 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

公开(公告)号：US20160093561A1

公开(公告)日：2016-03-31

申请号：US14863806

申请日：2015-09-24

Applicant: Renesas Electronics Corporation

Inventor： Yukinori TABIRA ,  Nobuya KOIKE ,  Toshinori KIYOHARA

IPC: H01L23/495 ,  H01L23/04

CPC classification number: H01L23/49541 ,  H01L21/561 ,  H01L23/04 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/544 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0603 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: To reduce a mounting area while securing a mounting strength of a semiconductor device, a power transistor includes a chip mounting portion, a semiconductor chip, a plurality of leads, and a sealing body. An outer lead portion in each of the plurality of leads includes a first portion protruding from a second side surface of the sealing body in a first direction, a second portion extending in a second direction intersecting with the first direction, and a third portion extending in a third direction intersecting with the second direction. Furthermore, a length of the third portion in the third direction of the outer lead portion is shorter than a length of the first portion in the first direction.

Abstract translation: 为了在确保半导体器件的安装强度的同时减小安装面积，功率晶体管包括芯片安装部分，半导体芯片，多个引线和密封体。 多个引线的每一个中的外引线部分包括从第一方向从密封体的第二侧表面突出的第一部分，沿与第一方向交叉的第二方向延伸的第二部分，以及第三部分， 与第二方向相交的第三方向。 此外，外引线部分的第三方向上的第三部分的长度比第一部分在第一方向上的长度短。

公开(公告)号：US20150187606A1

公开(公告)日：2015-07-02

申请号：US14613179

申请日：2015-02-03

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATO ,  Nobuya KOIKE

IPC: H01L21/56 ,  H01L23/495

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

Abstract translation: 提供了一种能够提高通过物理地固定单独形成的芯片安装部分和引线框而制造的半导体器件的可靠性的技术。 实施例的特征在于，形成在悬挂引线中的第二接合部嵌入到形成在芯片安装部分中的第一接合部分中，从而物理地固定芯片安装部分和悬架引线。 具体而言，第一接合部由设置在芯片安装部的表面的凹部形成。 第二接合部分形成悬挂引线的一部分。

公开(公告)号：US20150325506A1

公开(公告)日：2015-11-12

申请号：US14805218

申请日：2015-07-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATO ,  Nobuya KOIKE

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/24 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/386 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.