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公开(公告)号：US20180159024A1
公开(公告)日：2018-06-07
申请号：US15704921
申请日：2017-09-14
Applicant: Kabushiki Kaisha Toshiba
Inventor： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Tomoaki Inokuchi
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US09985201B2
公开(公告)日：2018-05-29
申请号：US15451673
申请日：2017-03-07
Applicant: Kabushiki Kaisha Toshiba
Inventor： Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Yuuzo Kamiguchi , Naoharu Shimomura , Tadaomi Daibou , Tomoaki Inokuchi
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L23/528 , H01L27/228 , H01L43/02 , H01L43/10
Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
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公开(公告)号：US09793469B2
公开(公告)日：2017-10-17
申请号：US15259408
申请日：2016-09-08
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yushi Kato , Tadaomi Daibou , Yuichi Ohsawa , Shumpei Omine , Naoki Hase
CPC classification number: H01L43/08 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.
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公开(公告)号：US09299918B2
公开(公告)日：2016-03-29
申请号：US14504140
申请日：2014-10-01
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
CPC classification number: H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。
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公开(公告)号：US10580472B2
公开(公告)日：2020-03-03
申请号：US16196663
申请日：2018-11-20
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yuichi Ohsawa , Hiroaki Yoda , Altansargai Buyandalai , Satoshi Shirotori , Mariko Shimizu , Hideyuki Sugiyama , Yushi Kato
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
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Patent Agency Ranking
公开(公告)号：US20200020374A1
公开(公告)日：2020-01-16
申请号：US16273387
申请日：2019-02-12
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hiroaki YODA , Satoshi Takaya , Yuichi Ohsawa , Naoharu Shimomura , Katsuhiko Koui , Yushi Kato , Shinobu Fujita
Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.
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公开(公告)号：US10529399B2
公开(公告)日：2020-01-07
申请号：US16106694
申请日：2018-08-21
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda , Katsuhiko Koui , Tomoaki Inokuchi , Naoharu Shimomura
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
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公开(公告)号：US20190279699A1
公开(公告)日：2019-09-12
申请号：US16106694
申请日：2018-08-21
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda , Katsuhiko Koui , Tomoaki Inokuchi , Naoharu Shimomura
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
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公开(公告)号：US10347820B2
公开(公告)日：2019-07-09
申请号：US15704921
申请日：2017-09-14
Applicant: Kabushiki Kaisha Toshiba
Inventor： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Tomoaki Inokuchi
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10109334B2
公开(公告)日：2018-10-23
申请号：US15848022
申请日：2017-12-20
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hiroaki Yoda , Naoharu Shimomura , Yuichi Ohsawa , Tadaomi Daibou , Tomoaki Inokuchi , Satoshi Shirotori , Altansargai Buyandalai , Yuuzo Kamiguchi
Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.
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