Invention Grant
- Patent Title: Magnetic memory device
-
Application No.: US16196663Application Date: 2018-11-20
-
Publication No.: US10580472B2Publication Date: 2020-03-03
- Inventor: Yuichi Ohsawa , Hiroaki Yoda , Altansargai Buyandalai , Satoshi Shirotori , Mariko Shimizu , Hideyuki Sugiyama , Yushi Kato
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-053612 20170317
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/02 ; H01L27/22

Abstract:
According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
Public/Granted literature
- US20190088297A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-03-21
Information query