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    Automatic electrostatic chuck bias compensation during plasma processing
    12.
    发明授权
    Automatic electrostatic chuck bias compensation during plasma processing 有权

    公开(公告)号：US11948780B2

    公开(公告)日：2024-04-02

    申请号：US17319013

    申请日：2021-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers ,  Leonid Dorf

    IPC: H01J37/32 ,  H01L21/683

    CPC classification number: H01J37/32715 ,  H01J37/32146 ,  H01J37/32568 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3341

    Abstract: Embodiments of the present disclosure relate to a system for pulsed direct-current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

    System for tunable workpiece biasing in a plasma reactor
    15.
    发明授权
    System for tunable workpiece biasing in a plasma reactor 有权

    公开(公告)号：US10373804B2

    公开(公告)日：2019-08-06

    申请号：US15424405

    申请日：2017-02-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Travis Koh ,  Philip Allan Kraus ,  Leonid Dorf ,  Prabu Gopalraja

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

    Photoresist treatment method by low bombardment plasma
    19.
    发明授权
    Photoresist treatment method by low bombardment plasma 有权
    光刻胶处理方法采用低轰击等离子体

    公开(公告)号：US09177824B2

    公开(公告)日：2015-11-03

    申请号：US14301847

    申请日：2014-06-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Leonid Dorf ,  Shahid Rauf ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    IPC: H01L21/311 ,  H01L21/027 ,  G03F7/004 ,  G03F7/00 ,  H01J37/32

    CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

    Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

    Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。

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