公开(公告)号：US20240266150A1

公开(公告)日：2024-08-08

申请号：US18260662

申请日：2021-12-23

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yan LI ,  Shixuan GUO ,  Xingfei MAO

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32834 ,  H01J2237/3341 ,  H01J2237/3348

Abstract: The present disclosure provides a semiconductor processing chamber including a chamber, a housing, a dielectric window, a coil, a hot air hood, and an air distribution structure. The chamber has an opening at a top of the chamber. The housing is disposed above the opening. The dielectric window is disposed inside the housing and above the opening. The coil is arranged circumferentially at an inner top wall of the housing. The hot air hood is disposed inside the housing. The air distribution structure is fixedly attached to the housing. The air distribution structure includes a plurality of air passages. An air exchange port of the air passage is located outside the housing. A transfer port of the air passage is located inside the housing and is connected to an air passage port of the hot air hood. Through directly fixing the hot air hood to the dielectric window and configuring a clearance gap between the hot air hood and an inner top wall of the housing, the semiconductor processing chamber avoids compression between the hot air hood and the housing, avoids the deformation of the top wall of the housing and the change of coil distribution structure caused by the compression of the top wall of the housing by the hot air hood. Thus, the uniform distribution of the ions and free radicals in the plasma is ensured.

公开(公告)号：US20240203704A1

公开(公告)日：2024-06-20

申请号：US18526489

申请日：2023-12-01

Applicant: SEMES CO., LTD.

Inventor： Yoon Seok CHOI ,  Yun Sang KIM ,  Han Lim KANG ,  Hyun Woo JO ,  Sang Jeong LEE ,  Youn Gun BONG

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32568 ,  H01J2237/3348

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an ion blocker dividing the inner space into a first space at a bottom side and a second space at a top side; a support unit configured to support a substrate at the first space; and a plasma source generating a plasma at the inner space, and wherein a plurality of passages are formed at the ion blocker for flowing a fluid from the second space to the first space, and the ion blocker is made of a dielectric substance, and an ion among an ion and a radical included in the plasma is captured while passing through the passage.

公开(公告)号：US09691643B2

公开(公告)日：2017-06-27

申请号：US14499341

申请日：2014-09-29

Applicant: Tokyo Electron Limited

Inventor： Eiichi Nishimura ,  Tadashi Kotsugi ,  Fumiko Yamashita

IPC: H01L21/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L21/67069 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31138

Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

公开(公告)号：US09117767B2

公开(公告)日：2015-08-25

申请号：US13188421

申请日：2011-07-21

Applicant: Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

Inventor： Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  H01J37/02 ,  H01J37/32 ,  C23C14/34 ,  C23C16/505 ,  H01L21/311 ,  H01L21/67 ,  H05H1/46

CPC classification number: H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract translation: 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。

公开(公告)号：US20140138350A1

公开(公告)日：2014-05-22

申请号：US14081947

申请日：2013-11-15

Applicant: FEI Company

Inventor： Ronald Kelley

IPC: B05D3/04

CPC classification number: H01J37/3053 ,  B05D3/044 ,  C23C14/30 ,  G01N1/286 ,  G01N1/32 ,  G01N2001/2886 ,  H01J37/265 ,  H01J37/3056 ,  H01J2237/31745 ,  H01J2237/3348 ,  H01L21/02318

Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

Abstract translation: 提供了一种方法和装置，用于以减少或防止伪影的方式制备用于在带电粒子束系统中观察的样品。 在最终研磨之前或期间，使用带电粒子束沉积将材料沉积到样品上，这导致无伪影的表面。 实施例对于制备具有不同硬度的材料层的样品的SEM观察的截面是有用的。 实施例可用于制备薄TEM样品。

公开(公告)号：US20100253224A1

公开(公告)日：2010-10-07

申请号：US12621590

申请日：2009-11-19

Applicant: Alexei Marakhtanov ,  Eric Hudson ,  Rajhinder Dhindsa ,  Andrew D. Bailey, III

Inventor： Alexei Marakhtanov ,  Eric Hudson ,  Rajhinder Dhindsa ,  Andrew D. Bailey, III

IPC: H05B31/26

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

Abstract translation: 提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。 所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。 作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。 第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。 第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。 最大幅度部分比最小振幅部分的幅度更大。 占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。 第二周期部分在最大振幅部分期间另外具有第二频率。 第二周期部分的幅度调制被锁相到第一连续周期部分。

公开(公告)号：US06632321B2

公开(公告)日：2003-10-14

申请号：US09225825

申请日：1999-01-05

Applicant: Thorsten Lill ,  David Mui ,  Michael Grimbergen

Inventor： Thorsten Lill ,  David Mui ,  Michael Grimbergen

IPC: C23F100

CPC classification number: H01L22/26 ,  H01J37/321 ,  H01J37/32935 ,  H01J2237/3348 ,  H01L21/67253

Abstract: A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector which interferometrically measures the etch rate. The actual rate of change of the etch as it progresses is measures by this technique and is compared to a model of a desired rate of change in a controller. The error between the actual rate of change and the desired rate of change is then used to vary at least one of the process parameters of the system in a direction tending to null the difference.

Abstract translation: 一种用于在干蚀刻半导体晶片处理系统中监测，测量和/或控制蚀刻速率的方法和装置。 晶片处理系统具有监测组件，其包括电磁辐射源和检测器，其干涉测量蚀刻速率。 当进行蚀刻时，实际的蚀刻速率是通过该技术的测量值，并且与控制器中希望的变化率的模型进行比较。 然后，使用实际变化率与期望变化率之间的误差来改变系统的至少一个过程参数，以便将该差异置零。

公开(公告)号：US20030029834A1

公开(公告)日：2003-02-13

申请号：US09225825

申请日：1999-01-05

Inventor： THORSTEN LILL ,  MICHAEL GRIMBERGEN ,  DAVID MUI

IPC: C23F001/00 ,  H01L021/66 ,  G01L021/30

CPC classification number: H01L22/26 ,  H01J37/321 ,  H01J37/32935 ,  H01J2237/3348 ,  H01L21/67253

Abstract: A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector which interferometrically measures the etch rate. The source, preferably a UV light source, is directed at a portion of the wafer surface where the etching is taking place. A first portion of the UV light reflects back from the surface at one phase because it is reflected from the surface of the features of the wafer and a second portion of the UV light reflects from the bottom of the features at a slightly different phase. The differences in these phases when properly filtered set up interference patterns which are more intense where the differently phased first and second portions of the light combine or interfere and less intense where they cancel. The interference pattern by its change in wave length is proportional or representative of the rate of change in the etch pattern. The actual rate of change of the etch as it progresses is measured by this technique and is compared to a model of a desired rate of change in a controller. The error between the actual rate of change and the desired rate of change is then used to vary at least one of the process parameters of the system in a direction tending to null the difference.

Abstract translation: 一种用于在干蚀刻半导体晶片处理系统中监测，测量和/或控制蚀刻速率的方法和装置。 晶片处理系统具有监测组件，其包括电磁辐射源和检测器，其干涉测量蚀刻速率。 源，优选地是UV光源，指向晶片表面的正在进行蚀刻的部分。 UV光的第一部分在一个相位从表面反射回来，因为它从晶片的特征的表面反射，并且UV光的第二部分以稍微不同的相位从特征的底部反射。 当适当滤波时，这些相位的差异建立了更强烈的干涉图案，其中光的不同相位的第一和第二部分组合或干扰并且在它们取消的地方较不强烈。 通过其波长变化的干涉图案是成比例的或代表蚀刻图案的变化率。 通过该技术测量蚀刻的实际变化率，并与控制器中期望的变化率的模型进行比较。 然后，使用实际变化率和所需变化率之间的误差来改变系统的至少一个方向，以使得该差异为零。

公开(公告)号：US6085688A

公开(公告)日：2000-07-11

申请号：US49722

申请日：1998-03-27

Applicant: Dimitris Lymberopoulos ,  Peter Loewenhardt ,  John Yamartino

Inventor： Dimitris Lymberopoulos ,  Peter Loewenhardt ,  John Yamartino

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/3266 ,  H01J2237/3348

Abstract: The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases, processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature. As such, average ion density near the workpiece can by increased without otherwise causing damage to the workpiece. It is a further feature of the present invention to provide independently controllable conductors for generating the magnetic field and to provide an adjustable non-uniformly distributed magnetic field within the chamber. This can be used to selectively control plasma density or to selectively confine process gas species.

Abstract translation: 本发明提供了一种用于在电感耦合等离子体反应器中处理工件的装置和方法。 将感应功率施加到反应器以产生等离子体。 在等离子体反应器内产生一个与工件表面垂直的力线。 通过控制所施加的磁场来控制工件表面附近的电子温度是本发明的一个特征。 增加工件附近的平均离子密度是另一个特征，而不会由于不均匀的电荷积聚而造成工件损坏。 施加的磁场可以是时间不变或时变。 在这两种情况下，可以通过将磁场的大小调整到刚好低于由于不均匀电荷积聚造成的损坏的水平，来优化处理。 使用时变场，平均离子密度可以相对于平均电子温度进行调整。 因此，靠近工件的平均离子密度可以增加而不会对工件造成损害。 本发明的另一个特征是提供用于产生磁场的可独立控制的导体并且在室内提供可调节的非均匀分布的磁场。 这可以用于选择性地控制等离子体密度或选择性地限制工艺气体种类。

公开(公告)号：US5895551A

公开(公告)日：1999-04-20

申请号：US842997

申请日：1997-04-25

Applicant: Chang Heon Kwon

Inventor： Chang Heon Kwon

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

CPC classification number: H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/3348

Abstract: The present invention discloses a plasma etching apparatus which can protect the surface of the wafer from a damage due to collisions among the etching ions and can also process a plurality of wafers only by one-time plasma generation. In the etching apparatus of the present invention, a plurality of wafers are loaded in the chamber by a plurality of wafer support members which are located vertically round the gas dispersion tube used as a cathode electrode, and magnetic field formation means are provided to form a magnetic field around each wafer.

Abstract translation: 本发明公开了一种能够保护晶片表面免受蚀刻离子之间碰撞造成的损伤的等离子体蚀刻装置，并且也可以通过一次等离子体产生来处理多个晶片。 在本发明的蚀刻装置中，多个晶片通过位于垂直于用作阴极电极的气体分散管的圆周方向的多个晶片支撑构件装载在腔室中，并且形成磁场形成装置 每个晶片周围的磁场。