Invention Grant
- Patent Title: Etching apparatus
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Application No.: US14499341Application Date: 2014-09-29
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Publication No.: US09691643B2Publication Date: 2017-06-27
- Inventor: Eiichi Nishimura , Tadashi Kotsugi , Fumiko Yamashita
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-011202 20120123
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L21/3065 ; H01L21/67 ; H01L21/033 ; H01L21/311 ; H01J37/32 ; H01L21/027 ; G03F7/00 ; B82Y10/00 ; B82Y40/00
Abstract:
An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.
Public/Granted literature
- US20150013908A1 ETCHING APPARATUS Public/Granted day:2015-01-15
Information query
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