Invention Grant
- Patent Title: Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
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Application No.: US15146133Application Date: 2016-05-04
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Publication No.: US09799491B2Publication Date: 2017-10-24
- Inventor: Leonid Dorf , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , James D. Carducci , Hamid Tavassoli , Olga Regelman , Ying Zhang
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/06 ; H01L21/3065
Abstract:
The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
Public/Granted literature
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