Abstract:
A blanking device for multi charged particle beams includes a plurality of individual blanking mechanisms configured to individually deflect a corresponding beam of multi charged particle beams so as to control ON/OFF of the corresponding beam, and a common blanking mechanism configured to include a plurality of electrode groups, each composed of facing electrodes, where an array pitch of a plurality of electrode groups is smaller than or equal to a pitch of the multi charged particle beams, and to collectively deflect the multi charged particle beams in order to control an exposure time.
Abstract:
A multi charged particle beam writing apparatus includes a divided shot data generation unit to generate, for each shot of multi beams of charged particle beams, data for plural times of divided shots such that irradiation for one shot of each beam is divided into plural times of divided shots each having a different irradiation time, an individual blanking system to provide blanking control individually for each of multi beams, based on the data for plural times of divided shots, an elastic rate correction value acquisition unit to acquire, for each of plural times of divided shots, an elastic rate correction value for correcting an elastic rate of an image of the whole multi beams, depending upon the number of ON-beams of the multi beams, and a lens to correct, for each divided shot, the elastic rate of the image of the whole multi beams by using the correction value.
Abstract:
A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.
Abstract:
A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.
Abstract:
An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.
Abstract:
One embodiment relates to a pillar-supported array of micro electron lenses. The micro-lens array includes a base layer on a substrate, the base layer including an array of base electrode pads and an insulating border surrounding the base electrode pads so as to electrically isolate the base electrode pads from each other. The micro-lens array further includes an array of lens holes aligned with the array of base electrode pads and one or more stacked electrode layers having openings aligned with the array of lens holes. The micro-lens array further includes one or more layers of insulating pillars, each layer of insulating pillars supporting a stacked electrode layer. Another embodiment relates to a method of fabricating a pillar-supported array of micro electron lenses. Other embodiments, aspects and features are also disclosed.
Abstract:
A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.
Abstract:
A charged particle beam writing apparatus includes a first limiting aperture member, in which a first opening is formed, to block a charged particle beam having been blanking-controlled to be beam “off”, and to let a part of the charged particle beam having been blanking-controlled to be beam “on” pass through the first opening, a first detector to detect a first electron amount irradiating the first limiting aperture member, in a state were beam “on” and beam “off” are repeated, a first integration processing unit to generate a first integrated signal by integrating components in a band sufficiently lower than a band of a repetition cycle of beam “on” and beam “off”, in a first detected signal detected for obtaining the first electron amount, and a first irregularity detection unit to detect irregularity in a dose amount of the charged particle beam by using the first integrated signal.
Abstract:
Provided is a target device for scattering a charged particle incident thereon, the device comprising: a base; a reference mark provided on the base and having a range of the charged particle therein smaller than a range of the charged particle in the base; and a shield provided on the base apart from the reference mark and having a range of the charged particle therein smaller than the range of the charged particle in the base.
Abstract:
The invention relates to a charged-particle microscope comprising a charged-particle source; a sample holder; a charged-particle lens system; a detector; and a beam pulsing device, for causing the beam to repeatedly switch on and off so as to produce a pulsed beam. The beam pulsing device comprises a unitary resonant cavity disposed about a particle-optical axis and has an entrance aperture and an exit aperture for the beam. The resonant cavity is configured to simultaneously produce a first oscillatory deflection of the beam at a first frequency in a first direction and a second oscillatory deflection of the beam at a second, different frequency in a second, different direction. The resonant cavity may have an elongated (e.g. rectangular or elliptical) cross-section, with a long axis parallel to said first direction and a short axis parallel to said second direction.