Abstract:
The invention relates to a charged particle optical device for manipulating a trajectory of multiple beamlets of charged particles. Said charged particle optical device comprising an electromagnetic deflector comprising a planar substrate having an upper side and a lower side of said substrate, and an even thickness. The substrate comprises: a through opening for passing said beamlets there through, wherein said through opening debouches in the upper and lower side of said substrate; a first and a second coil, wherein each of said coils preferably is a substantially helical coil and comprises conducting upper leads arranged at the upper side, conducting lower leads arranged at the lower side, and vias extending through said substrate and which conductively connect one of said upper leads with one of said lower leads for forming said coil; wherein said first and second coils are arranged on either side of the through opening.
Abstract:
The invention relates to a charged particle lithography system for transferring a pattern onto a target, said system comprising:a target positioning device comprising a target holder having a first side for holding the target,a charged particle optical unit for generating a charged particle beam, modulating said charged particle beam, and directing said charged particle beam towards the first side of the target holder, anda sensor assembly comprising a converter element for converting charged particles which impinge on said converter element into light, wherein the converter element is arranged on said target positioning device, a light sensor for detecting the light, wherein the light sensor is arranged at a distance from said target positioning device, and a light optical lens which is arranged between the converter element and the light sensor for directing light originating from said converter element to said sensor.
Abstract:
The invention relates to a substrate comprising an optical position mark for being read-out by an optical recording head for emitting light of predetermined wavelength, preferably red or infra-red light, more in particular of 635 nm light, the optical position mark having a mark height, a mark length and a predetermined known position on the substrate, the optical position mark extending along a longitudinal direction and being arranged for varying a reflection coefficient of the position mark along said longitudinal direction, wherein the optical position mark comprises: a first region having a first reflection coefficient and a first width; a second region neighboring the first region and forming a first region pair, the second region having a second reflection coefficient and a second width, and the second reflection coefficient being different from the first reflection coefficient, wherein the first region comprises sub-wavelength structures in comparison with a wavelength of the predetermined wavelength light.
Abstract:
The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.
Abstract:
The invention relates to a collimator electrode stack (70), comprising: at least three collimator electrodes (71-80) for collimating a charged particle beam along an optical axis (A), wherein each collimator electrode comprises an electrode body with an electrode aperture for allowing passage to the charged particle beam, wherein the electrode bodies are spaced along an axial direction (Z) which is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis; and a plurality of spacing structures (89) provided between each pair of adjacent collimator electrodes and made of an electrically insulating material, for positioning the collimator electrodes at predetermined distances along the axial direction. Each of the collimator electrodes (71-80) is electrically connected to a separate voltage output (151-160).The invention further relates to a method of operating a charged particle beam generator.
Abstract:
The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.
Abstract:
A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
Abstract:
The invention relates to a lithography system. The lithography system has a projection lens system and a capacitive sensing system. The projection lens system is provided with a final projection lens. The capacitive sensing system is arranged for making a measurement related to a distance between the final projection lens and a target. The capacitive sensing system includes at least one capacitive sensor. Additional, the capacitive sensing system is provided with a flexible printed circuit structure and at least one integrated flex print connector. The at least one sensor is located in the flexible printed circuit structure. The flexible printed circuit structure has a flexible base provided with conductive electrodes for the at least one sensor and conductive tracks. The conductive tracks extend from the electrodes along the at least one integrated flex print connector.
Abstract:
A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.
Abstract:
An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.