知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.015 seconds)

    Arrangement and method for transporting radicals
    1.
    发明授权
    Arrangement and method for transporting radicals 有权
    自由基运输的安排和方法

    公开(公告)号：US09123507B2

    公开(公告)日：2015-09-01

    申请号：US14385802

    申请日：2013-03-20

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Pieter Kruit ,  Marc Smits

    IPC: H01J37/02 ,  H01J37/317 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  F15D1/02 ,  H01J9/38 ,  H01J37/32

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  F15D1/025 ,  G03F7/70925 ,  G21K2201/06 ,  H01J9/38 ,  H01J37/3007 ,  H01J37/3177 ,  H01J37/32862 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/327 ,  Y10T137/2082 ,  Y10T137/87571

    Abstract: The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.

    Abstract translation: 本发明涉及一种输送自由基的装置。 该装置包括等离子体发生器和引导体。 等离子体发生器包括可以形成等离子体的腔室（2）。 腔室具有用于接收输入气体的入口（5）和用于去除其中产生的至少一种等离子体和自由基的一个或多个出口（6）。 引导体是中空的，并且被布置成用于将形成在等离子体中的自由基引导到要去除污染物沉积的区域或体积。 腔室入口联接到压力装置（40），用于向腔室提供脉冲压力，以便在引导体中产生流动。

    Method and Apparatus for Predicting a Growth Rate of Deposited Contaminants
    2.
    发明申请
    Method and Apparatus for Predicting a Growth Rate of Deposited Contaminants 有权
    用于预测沉积污染物生长速率的方法和装置

    公开(公告)号：US20150060701A1

    公开(公告)日：2015-03-05

    申请号：US14345656

    申请日：2012-09-19

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits

    IPC: G01N23/22 ,  G01N33/00 ,  H01J37/317

    CPC classification number: G01N23/22 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/0004 ,  G03F7/70608 ,  G03F7/70916 ,  H01J37/304 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/022 ,  H01J2237/31796

    Abstract: A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.

    Abstract translation: 一种光刻系统（10），包括用于将辐射投射到基板上的辐射投影系统（20），用于在投影辐射的路径中加载和定位待处理基板的基板输送系统（30），控制系统 ），用于控制衬底传输系统以移动衬底;以及抗蚀剂表征系统（50），其布置成用于确定特定类型的抗蚀剂是否适于通过光刻系统内的辐射曝光。 抗蚀剂表征系统（50）可以布置成用一个或多个辐射束将抗蚀剂暴露在衬底的表面上，测量从抗蚀剂发射的分子片段的质量分布，从而预测基于沉积的分子片段的生长速率 的增长率模型和测量的质量分布，并将预期增长率与预定的阈值增长率进行比较。

    PLASMA GENERATOR
    5.
    发明申请
    PLASMA GENERATOR 有权
    等离子发生器

    公开(公告)号：US20140231667A1

    公开(公告)日：2014-08-21

    申请号：US14348062

    申请日：2012-09-28

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits ,  Chris Franciscus Jessica Lodewijk

    IPC: H01J37/32 ,  H01J37/30

    CPC classification number: H01J37/32082 ,  H01J37/3002 ,  H01J37/32862 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4675 ,  H05H2001/4682

    Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.

    Abstract translation: 一种用于产生等离子体的装置，该装置包括主要等离子体源（1），其包括用于在初级源室中产生等离子体的初级源室（15）和第一线圈（4），次级等离子体源（25） 源室（16）和第二线圈（26），用于增强由初级等离子体源产生的等离子体和/或在次级源室中产生等离子体，在主源室中产生等离子体;空心引导体（11） 由初级等离子体源产生的等离子体的至少一部分等离子体源，以及用于发射由该装置产生的等离子体的至少一部分的出口（14）。

    Method and apparatus for predicting a growth rate of deposited contaminants
    7.
    发明授权
    Method and apparatus for predicting a growth rate of deposited contaminants 有权
    预测沉积污染物生长速率的方法和装置

    公开(公告)号：US09506881B2

    公开(公告)日：2016-11-29

    申请号：US14345656

    申请日：2012-09-19

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits

    IPC: G01N23/22 ,  G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/00

    CPC classification number: G01N23/22 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/0004 ,  G03F7/70608 ,  G03F7/70916 ,  H01J37/304 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/022 ,  H01J2237/31796

    Abstract: A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.

    Abstract translation: 一种光刻系统（10），包括用于将辐射投射到基板上的辐射投影系统（20），用于在投影辐射的路径中加载和定位待处理基板的基板输送系统（30），控制系统 ），用于控制衬底传输系统以移动衬底;以及抗蚀剂表征系统（50），其布置成用于确定特定类型的抗蚀剂是否适于通过光刻系统内的辐射曝光。 抗蚀剂表征系统（50）可以布置成用一个或多个辐射束将抗蚀剂暴露在衬底的表面上，测量从抗蚀剂发射的分子片段的质量分布，从而预测基于沉积的分子片段的生长速率 的增长率模型和测量的质量分布，并将预期增长率与预定的阈值增长率进行比较。

    PLASMA GENERATOR
    8.
    发明申请
    PLASMA GENERATOR 审中-公开
    等离子发生器

    公开(公告)号：US20140252953A1

    公开(公告)日：2014-09-11

    申请号：US14348071

    申请日：2012-09-28

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits ,  Chris Franciscus Jessica Lodewijk

    IPC: H01J37/32

    CPC classification number: H01J37/32082 ,  H01J37/3002 ,  H01J37/32862 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4675 ,  H05H2001/4682

    Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.

    Abstract translation: 一种用于产生等离子体的装置，该装置包括布置成产生等离子体的初级等离子体源（1），中空引导体（11），其布置成将由初级等离子体源产生的等离子体的至少一部分引导到次级等离子体源 25）和用于从该装置发射由等离子​​体产生的至少一部分原子自由基的出口（14）。

    Plasma generator
    9.
    发明授权
    Plasma generator 有权
    等离子发生器

    公开(公告)号：US09224580B2

    公开(公告)日：2015-12-29

    申请号：US14348062

    申请日：2012-09-28

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marc Smits ,  Chris Franciscus Jessica Lodewijk

    IPC: H01J37/10 ,  H01J37/32 ,  H05H1/30 ,  H05H1/46 ,  H01J37/30

    CPC classification number: H01J37/32082 ,  H01J37/3002 ,  H01J37/32862 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4675 ,  H05H2001/4682

    Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.

    Abstract translation: 一种用于产生等离子体的装置，该装置包括主要等离子体源（1），其包括用于在初级源室中产生等离子体的初级源室（15）和第一线圈（4），次级等离子体源（25） 源室（16）和第二线圈（26），用于增强由初级等离子体源产生的等离子体和/或在次级源室中产生等离子体，在主源室中产生等离子体;空心引导体（11） 由初级等离子体源产生的等离子体的至少一部分等离子体源，以及用于发射由该装置产生的等离子体的至少一部分的出口（14）。

Patent Agency Ranking