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公开(公告)号：US20240222066A1
公开(公告)日：2024-07-04
申请号：US18529239
申请日：2023-12-05
申请人： FEI Company
发明人： Afric Meijer
CPC分类号： H01J37/226 , H01J37/14 , H01J37/20 , H01J37/28 , H01S3/0405 , H01S3/042 , H01S3/06708 , H01J2237/0041
摘要： Fiber Fabry-Perot Cavity laser phase plate for microscopy are described herein. In one aspect, a micro Fabry-Perot laser cavity for charged particle microscopy, can include: a first fiber assembly and a second fiber assembly, wherein each of the first fiber and the second fiber assembly includes: an entrance region including a single-mode fiber; a spacer region including a multimode fiber or a transparent substrate; a convergence region including a gradient index fiber or gradient index lens; and a speculum region including a multimode fiber or a transparent substrate, the entrance region, spacer region, the convergence region, and the speculum region being in optical communication with one another, and where a face of the speculum region of the first fiber assembly faces a face of the speculum region of the second fiber assembly, thereby defining a gap therebetween.
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公开(公告)号：US12027342B2
公开(公告)日：2024-07-02
申请号：US18363284
申请日：2023-08-01
发明人： Yuta Imai , Masahiro Sasajima , Yoshihiro Takahoko
IPC分类号： H01J37/14 , H01J37/12 , H01J37/145 , H01J37/15 , H01J37/21 , H01J37/28 , H01J37/141
CPC分类号： H01J37/145 , H01J37/15 , H01J37/21 , H01J37/12 , H01J37/141 , H01J37/28
摘要： A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.
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公开(公告)号：US11804360B2
公开(公告)日：2023-10-31
申请号：US17778758
申请日：2020-11-04
发明人： Tsubasa Nanao , Hirofumi Morita , Takanao Touya
IPC分类号： H01J37/304 , H01J37/12 , H01J37/14 , H01J37/317 , H01J37/04 , G03F7/00 , H01J37/09
CPC分类号： H01J37/304 , G03F7/7005 , G03F7/7055 , G03F7/70383 , H01J37/12 , H01J37/14 , H01J37/3177 , H01J37/045 , H01J37/09 , H01J2237/0435
摘要： The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.
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公开(公告)号：US11791127B2
公开(公告)日：2023-10-17
申请号：US17397863
申请日：2021-08-09
IPC分类号： H01J37/22 , G01N21/95 , G01N21/956 , H01J37/14 , H01J37/147 , H01J37/244 , H01J37/28 , G01N21/88 , H01J37/153
CPC分类号： H01J37/222 , G01N21/8851 , G01N21/9501 , G01N21/956 , H01J37/14 , H01J37/1471 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/20292 , H01J2237/24592 , H01J2237/2804
摘要： A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
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5.发明授权公开(公告)号：US11705301B2
公开(公告)日：2023-07-18
申请号：US17152480
申请日：2021-01-19
发明人： Benjamin John Cook
IPC分类号： H01J37/14 , H01J37/145 , H01J37/147 , H01J37/317
CPC分类号： H01J37/145 , H01J37/1471 , H01J37/3174 , H01J2237/0453 , H01J2237/141 , H01J2237/1516
摘要： It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.
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公开(公告)号：US11482401B2
公开(公告)日：2022-10-25
申请号：US15930442
申请日：2020-05-13
发明人： Chaorong Lai , Leihong Pei
IPC分类号： H01J37/31 , A01D3/04 , H01J37/14 , H01J37/20 , H01J37/244 , H01L21/26 , H01L39/04 , H01J37/317 , H01J37/147 , H01L21/265
摘要： The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.
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公开(公告)号：US11335608B2
公开(公告)日：2022-05-17
申请号：US17224407
申请日：2021-04-07
申请人： KLA Corporation
发明人： Xinrong Jiang , Christopher Sears
IPC分类号： H01J37/00 , H01L21/66 , H01J37/063 , H01J37/065 , H01J37/244 , H01J37/14
摘要： An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.
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公开(公告)号：US20210305009A1
公开(公告)日：2021-09-30
申请号：US17344134
申请日：2021-06-10
申请人： Intel Corporation
发明人： Amir Raveh , Gideon Reisfeld , Patrick Pardy
IPC分类号： H01J37/153 , H01J37/12 , H01J37/14 , G02B26/08 , H01J37/244
摘要： An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.
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公开(公告)号：US11101106B2
公开(公告)日：2021-08-24
申请号：US16499327
申请日：2017-04-11
发明人： Youichi Shimizu , Hitoshi Tanaka
IPC分类号： H01J37/31 , H01J37/14 , H01J37/20 , H01J37/317 , H01J37/141
摘要： A multi-beam exposure device reducing variations of electron beam optical systems for electron beams, and preventing vacuum leakage. An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; multiple charged particle beam sources provided in the body tube, and emitting multiple charged particle beams in a direction of extension of the body tube; multiple electromagnetic optical elements, each provided corresponding to one of the multiple charged particle beams in the body tube, and controlling the one of the multiple charged particle beams; first and second partition walls arranged separately from each other in the direction of extension in the body tube, and forming a non-vacuum space between at least parts of the first and second partition walls; and a supporting unit provided in the body tube, and supporting the multiple electromagnetic optical elements for positioning of the multiple electromagnetic optical elements.
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公开(公告)号：US11087954B2
公开(公告)日：2021-08-10
申请号：US16517390
申请日：2019-07-19
IPC分类号： H01J37/22 , G01N21/95 , G01N21/956 , H01J37/14 , H01J37/147 , H01J37/244 , H01J37/28 , H01J37/153
摘要： A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
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