Multi-cell detector for charged particles

    公开(公告)号:US11784024B2

    公开(公告)日:2023-10-10

    申请号:US17572557

    申请日:2022-01-10

    CPC classification number: H01J37/244 H01J37/28 H01J2237/04756 H01J2237/2441

    Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another, preferably by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

    System and method for bare wafer inspection

    公开(公告)号:US11087954B2

    公开(公告)日:2021-08-10

    申请号:US16517390

    申请日:2019-07-19

    Inventor: Wei Fang Joe Wang

    Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

    Detection of buried features by backscattered particles

    公开(公告)号:US11443915B2

    公开(公告)日:2022-09-13

    申请号:US16649975

    申请日:2018-09-21

    Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

    SYSTEM AND METHOD FOR BARE WAFER INSPECTION
    5.
    发明申请

    公开(公告)号:US20200027693A1

    公开(公告)日:2020-01-23

    申请号:US16517390

    申请日:2019-07-19

    Inventor: Wei FANG Joe Wang

    Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

    Multi-cell detector for charged particles

    公开(公告)号:US11222766B2

    公开(公告)日:2022-01-11

    申请号:US16652398

    申请日:2018-09-28

    Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

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