公开(公告)号：US20230045072A1

公开(公告)日：2023-02-09

申请号：US17972292

申请日：2022-10-24

Applicant: KLA CORPORATION

Inventor： Henning Stoschus ,  Stefan Eyring ,  Christopher Sears

IPC: H01J37/304 ,  G01N23/2251 ,  H01J37/22 ,  H01L21/66 ,  G06N20/00

Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

公开(公告)号：US11335608B2

公开(公告)日：2022-05-17

申请号：US17224407

申请日：2021-04-07

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Christopher Sears

IPC: H01J37/00 ,  H01L21/66 ,  H01J37/063 ,  H01J37/065 ,  H01J37/244 ,  H01J37/14

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

公开(公告)号：US11508551B2

公开(公告)日：2022-11-22

申请号：US16691847

申请日：2019-11-22

Applicant: KLA CORPORATION

Inventor： Henning Stoschus ,  Stefan Eyring ,  Christopher Sears

IPC: H01J37/28 ,  H01J37/304 ,  G01N23/2251 ,  H01J37/22 ,  H01L21/66 ,  G06N20/00

Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.

公开(公告)号：US20220108862A1

公开(公告)日：2022-04-07

申请号：US17135279

申请日：2020-12-28

Applicant: KLA Corporation

Inventor： Nikolai Chubun ,  Xinrong Jiang ,  Youfei Jiang ,  Christopher Sears

IPC: H01J37/063 ,  H01J37/32 ,  H01J37/09 ,  H01J37/14

Abstract: An electron source is disclosed. The electron source may include an electron emitter configured to generate one or more electron beams. The electron source may further include a magnetic suppressor electrode surrounding at least a portion of the electron emitter. The magnetic suppressor electrode may be formed from one or more magnetic materials. The magnetic suppressor may be configured to shield at least a portion of the electron emitter from an axial magnetic field. The electron source may further include an extractor electrode positioned adjacent to a tip of the electron emitter.

公开(公告)号：US20210327770A1

公开(公告)日：2021-10-21

申请号：US17224407

申请日：2021-04-07

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Christopher Sears

IPC: H01L21/66 ,  H01J37/063 ,  H01J37/065 ,  H01J37/14 ,  H01J37/244

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

公开(公告)号：US11894214B2

公开(公告)日：2024-02-06

申请号：US17972292

申请日：2022-10-24

Applicant: KLA CORPORATION

Inventor： Henning Stoschus ,  Stefan Eyring ,  Christopher Sears

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/304 ,  G01N23/2251 ,  H01L21/66 ,  G06N20/00

CPC classification number: H01J37/304 ,  G01N23/2251 ,  G06N20/00 ,  H01J37/222 ,  H01L22/12 ,  H01J2237/221 ,  H01J2237/24475

Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

公开(公告)号：US11651934B2

公开(公告)日：2023-05-16

申请号：US17490405

申请日：2021-09-30

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Sameet Shriyan ,  Luca Grella ,  Kevin Cummings ,  Christopher Sears

IPC: H01J37/09 ,  H01J37/14 ,  H01J37/21 ,  H01J37/28

CPC classification number: H01J37/09 ,  H01J37/14 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/0453

Abstract: An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

公开(公告)号：US11508591B2

公开(公告)日：2022-11-22

申请号：US17170871

申请日：2021-02-08

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Christopher Sears ,  Nikolai Chubun ,  Luca Grella

IPC: H01J37/147 ,  H01L21/67 ,  G01N23/00 ,  H01J37/21

Abstract: An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second diameter larger than the first diameter. The first beam limiting aperture receives the electron beam. This beam limiting assembly reduces the influence of Coulomb interactions.

公开(公告)号：US12165838B2

公开(公告)日：2024-12-10

申请号：US16697347

申请日：2019-11-27

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Christopher Sears

IPC: H01J37/28 ,  H01J37/073 ,  H01J37/22

Abstract: A scanning electron microscopy system may include an electron-optical sub-system and a controller. The electron-optical sub-system may include an electron source and an electron-optical column configured to direct an electron beam to a sample. The electron-optical column may include a double-lens assembly, a beam limiting aperture disposed between a first and second lens of the double-lens assembly, and a detector assembly configured to detect electrons scattered from the sample. In embodiments, the controller of the scanning electron microscopy system may be configured to: cause the electron-optical sub-system to form a flooding electron beam and perform flooding scans of the sample with the flooding electron beam; cause the electron-optical sub-system to form an imaging electron beam and perform imaging scans of the sample with the imaging electron beam; receive images acquired by the detector assembly during the imaging scans; and determine characteristics of the sample based on the images.

公开(公告)号：US12165831B2

公开(公告)日：2024-12-10

申请号：US17829230

申请日：2022-05-31

Applicant: KLA CORPORATION

Inventor： Xinrong Jiang ,  Christopher Sears ,  Youfei Jiang ,  Sameet K. Shriyan ,  Jeong Ho Lee ,  Michael Steigerwald ,  Ralph Nyffenegger

IPC: H01J37/153 ,  H01J37/06 ,  H01J37/12 ,  H01J37/244 ,  H01J37/28

Abstract: A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.