公开(公告)号：US10913754B2

公开(公告)日：2021-02-09

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Kazuki Harano ,  Haruyoshi Sato ,  Tsubasa Shiratori ,  Naoki Yamada

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  C23C16/40 ,  H01L21/02 ,  H01L29/78 ,  H01L51/05 ,  H01L29/66

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US11043553B2

公开(公告)日：2021-06-22

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/02 ,  H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US10134582B2

公开(公告)日：2018-11-20

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L21/44 ,  H01L23/52 ,  H01L21/02 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US10259836B2

公开(公告)日：2019-04-16

申请号：US15363088

申请日：2016-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude

Inventor： Jae-soon Lim ,  Gyu-hee Park ,  Youn-joung Cho ,  Clement Lansalot ,  Won-tae Noh ,  Julien Lieffrig ,  Joo-ho Lee

IPC: C23C16/28 ,  C07F17/00 ,  C09D5/24 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L27/108 ,  H01L49/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)  Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.

公开(公告)号：US10224200B2

公开(公告)日：2019-03-05

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Sang-ick Lee ,  Sung-duck Lee ,  Sung-woo Cho

IPC: H01L21/02 ,  C07F5/06 ,  C09D1/00 ,  C09D5/24 ,  H01L21/311 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US09637511B2

公开(公告)日：2017-05-02

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C23C16/06 ,  C07F15/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

公开(公告)号：US20150266913A1

公开(公告)日：2015-09-24

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  C23C16/06 ,  C23C16/50

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。

公开(公告)号：US10651031B2

公开(公告)日：2020-05-12

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L23/52 ,  H01L21/44 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768 ,  H01L21/285 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US10319590B2

公开(公告)日：2019-06-11

申请号：US15294818

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-won Ko ,  Hyun-woo Kim ,  Youn-joung Cho ,  Jin-kyu Han

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

公开(公告)号：US10242877B2

公开(公告)日：2019-03-26

申请号：US15423027

申请日：2017-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho

IPC: H01L21/00 ,  H01L21/285 ,  H01L49/02 ,  H01L27/11582 ,  H01L29/66

Abstract: Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.