公开(公告)号：US10224200B2

公开(公告)日：2019-03-05

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Sang-ick Lee ,  Sung-duck Lee ,  Sung-woo Cho

IPC: H01L21/02 ,  C07F5/06 ,  C09D1/00 ,  C09D5/24 ,  H01L21/311 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US10882873B2

公开(公告)日：2021-01-05

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Kang-yong Lee ,  Sang-ick Lee ,  Sang-yong Jeon

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/40

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.